Method for processing dc marks for repairing lithography masks
US-2024411223-A1 · Dec 12, 2024 · US
US9303975B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9303975-B2 |
| Application number | US-201113229396-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 9, 2011 |
| Priority date | Sep 10, 2010 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
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A method for determining a registration error of a feature on a mask, including providing a first aerial image that was captured by means of a position measuring device and includes at least the feature, simulating, from pattern specifications of the mask, a second aerial image that includes at least the feature, taking into account at least one effect that causes distortion of the first aerial image, and determining the registration error of the feature as the distance of the position of the feature in the first aerial image from the position of the feature in the second aerial image. Also provided is a method for simulating an aerial image from pattern specifications of a mask and a position measuring device for carrying out the method.
Opening claim text (preview).
What is claimed is: 1. A method for determining a registration error of a feature on a mask, the registration error indicating a deviation of a nominal position of the feature from its actual position on the mask the method comprising: providing a first aerial image that was captured by a position measuring device and includes at least said feature, said feature comprising a registration pattern or marker, simulating, from pattern specifications of the mask, a second aerial imag…
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