Super-hard construction and method for making same
US-9039798-B2 · May 26, 2015 · US
Methods of forming polycrystalline diamond compacts
US9302236B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9302236-B2 |
| Application number | US-201213622530-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2012 |
| Priority date | Sep 19, 2011 |
| Publication date | Apr 5, 2016 |
| Grant date | Apr 5, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Methods for forming cutting elements comprising polycrystalline materials, methods for forming polycrystalline compacts for cutting elements of a drilling tool, methods for forming polycrystalline diamond compacts, and resulting polycrystalline compacts and cutting elements are disclosed. Grains of a hard material are introduced to a press and subjected to a high-pressure, high-temperature (HPHT) process to sinter the grains. The system conditions (i.e., temperature and pressure) are then adjusted past a phase or state change point, after which, at least one of the system conditions is held during an anneal stage before the system conditions are adjusted to final levels. The resulting compacts and cutting elements may therefore include inter-granularly bonded hard material grains with a more stable microstructure (e.g., less stressed microstructure) than a polycrystalline compact and cutting element formed without an anneal stage during the HPHT process.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming a polycrystalline compact, the method comprising: introducing grains of a hard material to a press; elevating a system temperature to a plateau sintering temperature; elevating a system pressure to a plateau sintering pressure; lowering the system temperature to a hold temperature past a change point at a change point temperature, the hold temperature being lower than the change point temperature; holding the system temperature a…
Assignees
Inventors
Classifications
Fixed Constructions · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9302236B2 cover?
- Methods for forming cutting elements comprising polycrystalline materials, methods for forming polycrystalline compacts for cutting elements of a drilling tool, methods for forming polycrystalline diamond compacts, and resulting polycrystalline compacts and cutting elements are disclosed. Grains of a hard material are introduced to a press and subjected to a high-pressure, high-temperature (HPH…
- Who is the assignee on this patent?
- Baker Hughes Inc
- What technology area does this patent fall under?
- Primary CPC classification B01J3/062. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Apr 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).