Quasi-linear spin torque nano-oscillators
US-2015372687-A1 · Dec 24, 2015 · US
Light emitting device and atomic oscillator
US9300308B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9300308-B2 |
| Application number | US-201414514823-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 15, 2014 |
| Priority date | Oct 16, 2013 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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- Title
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Abstract
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A light emitting device includes a first semiconductor multilayer film mirror of a first conductivity type, a second semiconductor multilayer film mirror of a second conductivity type that is different from the first conductivity type, an active layer formed between the first semiconductor multilayer film mirror and the second semiconductor multilayer film mirror, a third semiconductor multilayer film mirror of a semi-insulating type formed between the first semiconductor multilayer film mirror and the active layer, and a contact layer of the first conductivity type formed between the third semiconductor multilayer film mirror and the active layer, and the third semiconductor multilayer film mirror is formed of a material having a bandgap energy higher than an energy of light generated in the active layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting device comprising: a first semiconductor multilayer film mirror of a first conductivity type; a second semiconductor multilayer film mirror of a second conductivity type, the second conductivity type being different than the first conductivity type; an active layer between the first semiconductor multilayer film mirror and the second semiconductor multilayer film mirror; a third semiconductor multilayer film mirror of a semi-insulating…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9300308B2 cover?
- A light emitting device includes a first semiconductor multilayer film mirror of a first conductivity type, a second semiconductor multilayer film mirror of a second conductivity type that is different from the first conductivity type, an active layer formed between the first semiconductor multilayer film mirror and the second semiconductor multilayer film mirror, a third semiconductor multilay…
- Who is the assignee on this patent?
- Seiko Epson Corp
- What technology area does this patent fall under?
- Primary CPC classification H03L7/26. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).