Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9299852-B2
Application number	US-201213483078-A
Country	US
Kind code	B2
Filing date	May 30, 2012
Priority date	Jun 16, 2011
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an insulating surface;
irradiating the oxide semiconductor film with an oxygen ion so that an average surface roughness of a surface of the oxide semiconductor film is reduced;
forming a gate insulating film over the oxide semiconductor film after irradiating the oxide semiconductor film with the oxygen ion;
forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor film; and
performing heat treatment on the oxide semiconductor film after the irradiation of the oxide semiconductor film with the oxygen ion so that the oxide semiconductor film including a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is formed.

2. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the average surface roughness of the surface of the oxide semiconductor film is made greater than or equal to 0.1 nm and less than or equal to 0.6 nm by the irradiation of the oxygen ion.

3. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the irradiation with the oxygen ion is performed by an ion implantation method.

4. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the irradiation with the oxygen ion is performed by an ion doping method.

5. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the irradiation with the oxygen ion is performed by a plasma immersion ion implantation method.

6. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the irradiation is performed with a gas cluster ion beam including the oxygen ion.

7. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is provided in a range from the surface of the oxide semiconductor film to 5 nm in depth.

8. The method for manufacturing a semiconductor device according to claim 1 ,
wherein a thickness of the gate insulating film is greater than or equal to 5 nm and less than or equal to 15 nm.

9. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an insulating surface;
irradiating the oxide semiconductor film with a fluorine ion so that an average surface roughness of a surface of the oxide semiconductor film is reduced;
forming a gate insulating film over the oxide semiconductor film after irradiating the oxide semiconductor film with the fluorine ion;
forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor film; and
performing heat treatment on the oxide semiconductor film after the irradiation of the oxide semiconductor film with the fluorine ion so that fluorine is released from the oxide semiconductor film and the oxide semiconductor film including a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is formed.

10. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the average surface roughness of the surface of the oxide semiconductor film is made greater than or equal to 0.1 nm and less than or equal to 0.6 nm by the irradiation of the fluorine ion.

11. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the irradiation with the fluorine ion is performed by an ion implantation method.

12. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the irradiation with the fluorine ion is performed by an ion doping method.

13. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the irradiation with the fluorine ion is performed by a plasma immersion ion implantation method.

14. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the irradiation is performed with a gas cluster ion beam including the fluorine ion.

15. The method for manufacturing a semiconductor device according to claim 9 ,
wherein the crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is provided in a range from the surface of the oxide semiconductor film to 5 nm in depth.

16. The method for manufacturing a semiconductor device according to claim 9 ,
wherein a thickness of the gate insulating film is greater than or equal to 5 nm and less than or equal to 15 nm.

17. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide semiconductor film over an insulating surface;
performing plasma treatment on the oxide semiconductor film in an oxygen atmosphere so that an average surface roughness of a surface of the oxide semiconductor film is reduced;
forming a gate insulating film over the oxide semiconductor film after performing plasma treatment on the oxide semiconductor film;
forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor film; and
performing heat treatment on the oxide semiconductor film after the plasma treatment of the oxide semiconductor film in the oxygen atmosphere so that the oxide semiconductor film including a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is formed.

18. The method for manufacturing a semiconductor device according to claim 17 ,
wherein the average surface roughness of the surface of the oxide semiconductor film is made greater than or equal to 0.1 nm and less than or equal to 0.6 nm by performing the plasma treatment.

19. The method for manufacturing a semiconductor device according to claim 17 ,
wherein the crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is in a range from the surface of the oxide semiconductor film to 5 nm in depth.

20. The method for manufacturing a semiconductor device according to claim 17 ,
wherein a thickness of the gate insulating film is greater than or equal to 5 nm and less than or equal to 15 nm.

Assignees

• Yoshioka Kyoko
• Koezuka Junichi
• Ohno Shinji
• Sato Yuichi
• Sasagawa Shinya
• Semiconductor Energy Lab

Inventors

• Yoshioka Kyoko
• Koezuka Junichi
• Ohno Shinji
• Sato Yuichi
• Sasagawa Shinya

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D62/40

  Crystalline structures · CPC title

• H10D30/031 Primary

  of thin-film transistors [TFT] · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title