Altering capacitance of MIM capacitor having reactive layer therein

Patent metadata

Field	Value
Publication number	US-9299765-B2
Application number	US-201514687049-A
Country	US
Kind code	B2
Filing date	Apr 15, 2015
Priority date	Aug 18, 2010
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

Embodiments include a metal-insulator-metal (MIM) capacitor having: a first electrode; a second electrode disposed proximate the first electrode; an insulator layer between the first and second electrodes; and a reactive layer positioned proximate the insulator layer and configured to allow altering of the reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a reactive conductor.

First claim

What is claimed is:

1. A metal-insulator-metal (MIM) capacitor comprising:
a first electrode;
a second electrode disposed proximate the first electrode;
an insulator layer between the first and second electrodes; and
a reactive layer positioned proximate the insulator layer between the first and second electrodes and configured to allow altering of the reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a reactive conductor wherein the reactive layer includes silicon dioxide (SiO 2 ) in contact with the reactive conductor.

2. The MIM capacitor of claim 1 , wherein the reactive layer is positioned between the insulator layer and the first electrode.

3. The MIM capacitor of claim 1 , wherein the reactive layer is positioned between the insulator layer and the second electrode.

4. The MIM capacitor of claim 1 , wherein the reactive conductor is selected from the group comprising: aluminum (Al), titanium (Ti) and tantalum (Ta).

5. A metal-insulator-metal (MIM) capacitor comprising:
a first electrode;
a second electrode disposed proximate the first electrode;
an insulator layer between the first and second electrodes; and
a reactive layer positioned proximate the insulator layer between the first and second electrodes and configured to allow altering of the first reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a conductor material of one of: the first electrode and the second electrode wherein the reactive layer includes silicon dioxide (SiO 2 ) in contact with the reactive conductor.

6. The MIM capacitor of claim 5 , wherein the reactive layer includes a portion of the first electrode that is contact with the insulator layer.

7. The MIM capacitor of claim 5 , wherein the reactive layer includes a portion of the second electrode that is contact with the insulator layer.

8. The MIM capacitor of claim 5 , wherein the reactive layer is selected from the group comprising: aluminum (Al), silicon (Si), titanium (Ti) and tantalum (Ta).

Assignees

• Globalfoundries Inc

Inventors

• Edelstein Daniel C
• Stamper Anthony K

Classifications

• H10D1/68

  Capacitors having no potential barriers · CPC title

• H10D1/696 Primary

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H01G7/04

  having a dielectric selected for the variation of its permittivity with applied temperature · CPC title

• Y10T29/417

  Cross-Sectional Technologies · mapped topic

• H01L28/40

  Electricity · mapped topic