Display panel and display device
US-11982894-B2 · May 14, 2024 · US
US9299758B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9299758-B2 |
| Application number | US-201313960413-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 6, 2013 |
| Priority date | Aug 7, 2012 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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Disclosed is a dual display device having a vertical structure, in which a reflective display device and a self-emissive display device are formed on one substrate in a vertical structure so as to enable a reflective display or a self-emissive display according to a situation and provide a high resolution display. The dual display device having a vertical structure includes: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor: a reflection adjusting layer formed on the white light emitting device; and a color converting layer formed on the reflection adjusting layer.
Opening claim text (preview).
What is claimed is: 1. A dual display device having a vertical structure, comprising: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor; a reflection adjusting layer formed directly on the white light emitting device, and partially covering the white light emitting device, the reflection adjusting layer being a single layer formed of an electrochromic material or a nano material; and a color converting layer formed on the reflection adjusting layer. 2. The dual display device of claim 1 , wherein the reflection adjusting layer changes reflectivity by association with an output signal of the thin film transistor. 3. The dual display device of claim 1 , wherein the reflection adjusting layer is driven in a passive matrix type so that the reflection adjusting layer is driven by an electric signal applied between upper and lower electrodes. 4. The dual display device of claim 2 , wherein when the reflection adjusting layer is switched to a self-emissive mode, the reflection adjusting layer does not perform a reflectivity adjusting function associated with an output signal of the thin film transistor, but is maintained in a state of low reflectivity and high transmittance. 5. The dual display device of claim 4 , wherein a voltage in a range of 0 V to 50 V is applied to the reflection adjusting layer to change the reflectivity in a range of 0% to 99%. 6. The dual display device of claim 4 , wherein the nano material has any one form of a nano particle, a nano wire and a nano rod. 7. The dual display device of claim 6 , wherein the nano material includes silicon (Si). 8. The dual display device of claim 6 , wherein the reflectivity is adjusted according to an amount of lithium entering and coming out from the nano particle by applying a voltage to the nano material. 9. The dual display device of claim 1 , wherein the color converting layer is formed of a color filter or a quantum dot device. 10. The dual display device of claim 9 , wherein the quantum dot device is formed of a composite including the quantum dot device and one or more types of auxiliary materials. 11. The dual display device of claim 1 , wherein the white light emitting device is an organic white light emitting diode (OLED), an inorganic LED or a Q-LED. 12. The dual display device of claim 1 , wherein a white light from the white light emitting device is converted into a red color light, a green color light and a blue color light through the color converting layer. 13. The dual display device of claim 1 , wherein the reflection adjusting layer includes a thermal conductive material for discharging heat converted from light absorbed by the reflection adjusting layer.
comprising reflective means · CPC title
comprising two independent displays, e.g. for emitting information from two major sides of the display · CPC title
Reflecting elements (associated to illuminating devices G02F1/133605) · CPC title
Electricity · mapped topic
Electricity · mapped topic
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