Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
Ruthenium interconnect with high aspect ratio and method of fabrication thereof
US9299643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9299643-B2 |
| Application number | US-28614908-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 29, 2008 |
| Priority date | Sep 29, 2008 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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Abstract
Official abstract text for this publication.
An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.
First claim
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What is claimed is: 1. An electronic structure comprising: a first conductive body, wherein the first conductive body is a silicide layer formed on and in contact with a source/drain of a transistor, a gate oxide and a gate, wherein the gate is a word line of a memory array; a second conductive body, wherein the second conductive body is a bit line of the memory array; a dielectric layer between and in contact with the first and second conductive bodies, the dielectric layer d…
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Electricity · mapped topic
Electricity · mapped topic
- H10W20/40Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9299643B2 cover?
- An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an as…
- Who is the assignee on this patent?
- Wang Zheng, Wang Connie, Wilson Erik, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10W20/40. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).