Method for cutting substrate

US9299613B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9299613-B2
Application numberUS-201414324825-A
CountryUS
Kind codeB2
Filing dateJul 7, 2014
Priority dateOct 21, 2013
Publication dateMar 29, 2016
Grant dateMar 29, 2016

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  1. Title

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for cutting a substrate, comprising: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in the surface, radiating a laser towards the surface of the first groove to form a second groove as part of a second laser radiating process, wherein: radiating the laser towards the surface to form the first groove comprises radiating, in sequence, the laser towards a first outer point, a second outer point, a first intermediate point, a second intermediate point, and a first cut point of the surface, the first outer point, the second outer point, the first intermediate point, the second intermediate point, and the first cut point are spaced apart from one another by one or more distances, the first cut point corresponds to a cut line of the substrate, the first outer point and the second outer point are respectively disposed at a first lateral side and a second lateral side of the first cut point, the first intermediate point is disposed between the first cut point and the first outer point, the second intermediate point is disposed between the first cut point and the second outer point, the same kind of laser and the same intensity of laser is radiated towards each of the first outer point, the second outer point, the first intermediate point, the second intermediate point, and the first cut point, and radiating the laser towards the surface of the first groove comprises radiating the laser towards a second cut point, a third outer point, a fourth outer point, a third intermediate point, and a fourth intermediate point of the first groove. 2. The method for cutting a substrate of claim 1 , wherein, with respect to a total number of radiation times of the laser toward the substrate, the laser is radiated 50% of the radiation times toward the first cut point, 15% of the radiation times toward the first intermediate point, 15% of the radiation times toward the second intermediate point, 10% of the radiation times toward the first outer point, and 10% of the radiation times toward the second outer point. 3. The method for cutting a substrate of claim 2 , wherein: the first groove has a V-shaped cross-section, and the cross-section of the first groove is symmetrical about the cut line. 4. The method for cutting a substrate of claim 3 , wherein: a depth of the first groove is greatest at a portion corresponding to the first cut point, and the depth of the first groove decreases toward each of the first outer point and the second outer point. 5. The method for cutting a substrate of claim 4 , wherein the second cut point, the third outer point, the fourth outer point, the third intermediate point, and the fourth intermediate point are disposed below the first cut point, the first outer point, the second outer point, the first intermediate point, and the second intermediate point, respectively. 6. The method for cutting a substrate of claim 5 , wherein the kind of laser utilized as part of the first laser radiating process is the same as the kind of laser utilized as part of the second laser radiating process. 7. The method for cutting a substrate of claim 6 , wherein the intensity of the laser radiated as part of the second laser radiating process is greater than the intensity of the laser radiated as part of the first laser radiating process. 8. The method for cutting a substrate of claim 7 , wherein: the second laser radiating process comprises radiating, in sequence, the laser towards the third outer point, the fourth outer point, the third intermediate point, the fourth intermediate point, and the second cut point, and the kind of laser and the intensity of the laser radiated towards the third outer point, the fourth outer point, the third intermediate point, the fourth intermediate point, and the second cut point are the same as one another. 9. The method for cutting a substrate of claim 8 , wherein, with respect to a total number of radiation times of the laser toward the first groove, the laser is radiated 50% of the radiation times toward the second cut point, 15% of the radiation times toward the third intermediate point, 15% of the radiation times toward the fourth intermediate point, 10% of the radiation times towards the third outer point, and 10% of the radiation times towards the fourth outer point. 10. The method for cutting a substrate of claim 9 , wherein: the second groove has a V-shaped cross-section, and the cross-section of the second groove is symmetrical about the cut line. 11. The method for cutting a substrate of claim 10 , wherein: a depth of the second groove is greater than the depth of the first groove, the depth of the second groove is greatest at a portion corresponding to the second cut point, and the depth of the second groove decreases toward each of the third outer point and the fourth outer point. 12. The method for cutting a substrate of claim 11 , further comprising: radiating, after the second laser radiating process, a laser towards the surface of the second groove to cut the substrate as part of a third laser radiating process, wherein radiating the laser towards the second groove comprises radiating the laser towards a third cut point, a fifth outer point, a sixth outer point, a fifth intermediate point, and a sixth intermediate point of the second groove. 13. The method for cutting a substrate of claim 12 , wherein the third cut point, the fifth outer point, the sixth outer point, the fifth intermediate point, and the sixth intermediate point are vertically disposed below the second cut point, the third outer point, the fourth outer point, the third intermediate point, and the fourth intermediate point, respectively. 14. The method for cutting a substrate of claim 13 , wherein the kind of laser utilized as part of the third laser radiating process is the same as the kind of laser utilized as part of the second laser radiating process. 15. The method for cutting a substrate of claim 14 , wherein the intensity of the laser radiated as part of the third laser radiating process is greater than the intensity of the laser radiated as part of the second laser radiating process. 16. The method for cutting a substrate of claim 15 , wherein: the third laser radiating process comprises radiating, in sequence, the laser towards the fifth outer point, the sixth outer point, the fifth intermediate point, the sixth intermediate point, and the third cut point, and the kind of laser and the intensity of the laser radiated towards the fifth outer point, the sixth outer point, the fifth intermediate point, the sixth intermediate point, and the third cut point are the same as one another. 17. The method for cutting a substrate of claim 16 , wherein, with respect to a total number of radiation times of the laser toward the second groove, the laser is radiated 50% of the radiation times towards the third cut point, 15% of the radiation times toward the fifth intermediate point, 15% of the radiation times towards the sixth intermediate point, 10% of the radiation times towards the fifth outer point, and 10% of the radiation times towards the sixth outer point, respectively. 18. The method for cutting a substrate of claim 1 , wherein the cut surface of the substrate comprises: a first surface extending in a first direction from a lower surface of the substrate towards the surface of the substrate, the surface being an upper surface; and a second surface extending in a second direction from the first surface towards the

Assignees

Inventors

Classifications

  • Cutting or separating of wafers, substrates or parts of devices · CPC title

  • Energy control of the laser beam (B23K26/0622 takes precedence) · CPC title

  • Scoring using a focussed radiation beam, e.g. laser · CPC title

  • using a focussed radiation beam, e.g. laser (C03B33/0855 takes precedence) · CPC title

  • B23K26/38Primary

    by boring or cutting · CPC title

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What does patent US9299613B2 cover?
A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), an…
Who is the assignee on this patent?
Samsung Display Co Ltd, Philoptics Co Ltd
What technology area does this patent fall under?
Primary CPC classification B23K26/0626. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).