Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
US9299474B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9299474-B2 |
| Application number | US-201113812277-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 28, 2011 |
| Priority date | Jul 30, 2010 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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Abstract
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There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
First claim
Opening claim text (preview).
The invention claimed is: 1. An oxide comprising Zn, Sn, and Si, wherein: a ratio of [Zn]/([Zn]+[Sn]) is from 0.2 to 0.8, and a ratio of [Si]/([Zn]+[Sn]+[Si]) is from 0.01 to 0.10, wherein [Zn], [Sn], and [Si] are the content in atomic % of Zn, Sn, and Si, respectively, contained in the oxide. 2. A thin-film transistor, comprising a semiconductor layer comprising the oxide of claim 1 . 3. The thin-film transistor of claim 2 , wherein the semiconductor layer has a density of 5.8 g/cm 3 or higher. 4. The thin-film transistor of claim 3 , wherein the semiconductor layer has a density of 5.9 g/cm 3 or higher. 5. The thin-film transistor of claim 3 , wherein the semiconductor layer has a density of 6.0 g/cm 3 or higher. 6. The oxide of claim 1 , wherein the ratio, [Zn]/([Zn]+[Sn]), is from 0.3 to 0.75. 7. A sputtering target, comprising Zn, Sn, and Si, wherein: a ratio of [Zn]/([Zn]+[Sn]) is from 0.2 to 0.8, and a ratio of [Si]/([Zn]+[Sn]+[Si]) is from 0.01 to 0.10, wherein [Zn], [Sn], and [Si] are the content in atomic % of Zn, Sn, and Si, respectively, contained in the sputtering target. 8. The sputtering target of claim 7 , wherein the ratio, [Zn]/([Zn]+[Sn]), is from 0.3 to 0.75.
Assignees
Inventors
Classifications
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
- H10P14/3426Primary
Oxides · CPC title
using physical deposition, e.g. vacuum deposition or sputtering · CPC title
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
characterised by the materials · CPC title
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- What does patent US9299474B2 cover?
- There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Z…
- Who is the assignee on this patent?
- Morita Shinya, Miki Aya, Iwanari Yumi, and 6 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).