Semiconductor device and method for manufacturing the same
US-8988623-B2 · Mar 24, 2015 · US
US9298057B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9298057-B2 |
| Application number | US-201313939323-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2013 |
| Priority date | Jul 20, 2012 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
Opening claim text (preview).
The invention claimed is: 1. A display device comprising: a pixel portion comprising: a first transistor; a first insulating film over the first transistor; a second insulating film over the first insulating film; a third insulating film covering the second insulating film; and a first electrode over the third insulating film, the first electrode being electrically connected to the first transistor; and a driver circuit portion comprising: a second transistor; the first insulating film over the second transistor; and the second insulating film over the first insulating film, wherein the third insulating film is in a opening provided in the second insulating film, wherein the first insulating film comprises an inorganic insulating material, wherein the second insulating film comprises an organic insulating material, wherein the third insulating film comprises an inorganic insulating material, and wherein an edge portion of the second insulating film overlaps with the third insulating film. 2. The display device according to claim 1 further comprising: a second electrode over the first electrode; a fourth insulating film over the second electrode; a colored film over the fourth insulating film; and a light-blocking film over the fourth insulating film. 3. The display device according to claim 1 , wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—Zn-based metal oxide film. 4. The display device according to claim 1 , wherein the second insulating film is any of an acrylic-based resin, a polyimide-based resin, a benzocyclobutene-based resin, a polyamide-based resin, and an epoxy-based resin. 5. The display device according to claim 1 , wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film. 6. The display device according to claim 1 , wherein the first transistor and the second transistor each comprises an oxide semiconductor layer. 7. The display device according to claim 6 , wherein the oxide semiconductor layer comprises any of indium and zinc. 8. The display device according to claim 6 , wherein the oxide semiconductor layer has a first oxide semiconductor film and a second oxide semiconductor film. 9. An electronic device comprising the display device according to claim 1 . 10. The display device according to claim 1 , wherein an edge portion of the first insulating film overlaps with the third insulating film. 11. The display device according to claim 1 , wherein the first transistor and the second transistor each comprises a gate insulating film, a source electrode, and a drain electrode, and wherein bottom surfaces of the source electrode and the drain electrode are in contact with a top surface of the gate insulating film. 12. A display device comprising: a pixel portion comprising: a first transistor; a first insulating film over the first transistor; a second insulating film over the first insulating film; a third insulating film covering the second insulating film; a first electrode over the third insulating film, the first electrode being electrically connected to the first transistor; and a liquid crystal layer over the first electrode; and a driver circuit portion comprising: a second transistor; the first insulating film over the second transistor; and the second insulating film over the first insulating film, wherein the third insulating film is in an opening provided in the second insulating film wherein the first insulating film comprises an inorganic insulating material, wherein the second insulating film comprises an organic insulating material, wherein the third insulating film comprises an inorganic insulating material, and wherein an edge portion of the second insulating film overlaps with the third insulating film. 13. The display device according to claim 12 , further comprising: a first alignment film over the first electrode; a second alignment film over the liquid crystal layer; a second electrode over the second alignment film; a fourth insulating film over the second electrode; a colored film over the fourth insulating film; and a light-blocking film over the fourth insulating film. 14. The display device according to claim 12 , wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—Zn-based metal oxide film. 15. The display device according to claim 12 , wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film. 16. The display device according to claim 12 , wherein the first transistor and the second transistor each comprises an oxide semiconductor layer. 17. An electronic device comprising the display device according to claim 12 . 18. The display device according to claim 12 , wherein an edge portion of the first insulating film overlaps with the third insulating film. 19. The display device according to claim 12 , wherein the first transistor and the second transistor each comprises a gate insulating film, a source electrode, and a drain electrode, and wherein bottom surfaces of the source electrode and the drain electrode are in contact with a top surface of the gate insulating film. 20. A display device comprising: a pixel portion comprising: a first transistor; a first insulating film over the first transistor; a second insulating film over the first insulating film; a third insulating film covering the second insulating film; a first electrode over the third insulating film, the first electrode being electrically connected to the first transistor; and a liquid crystal layer over the first electrode; and a driver circuit portion comprising: a second transistor; the first insulating film over the second transistor; and the second insulating film over the first insulating film; wherein the first insulating film comprises an inorganic insulating material, wherein the second insulating film comprises an organic insulating material, wherein the third insulating film comprises an inorganic insulating material, wherein an edge portion of the second insulating film overlaps with the third insulating film, and wherein the third insulating film is not provided in the driver circuit portion. 21. The display device according to claim 20 , further comprising: a first alignment film over the first electrode; a second alignment film over the liquid crystal layer; a second electrode over the second alignment film; a fourth insulating film over the second electrode; a colored film over the fourth insulating film; and a light-blocking film over the fourth insulating film. 22. The display device according to claim 20 , wherein the first insulating film is any of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a hafnium oxide film, a gallium oxide film, and a Ga—Zn-based metal oxide film. 23. The display device according to claim 20 , wherein the third insulating film is any of a silicon nitride film, a silicon nitride oxide film, and an aluminum oxide film. 24. The display device according to claim 20 , wherein the first transistor and the second transistor each comprises a
Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title
in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title
Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence) · CPC title
Light shielding layers, e.g. black matrix (G02F1/136209 takes precedence) · CPC title
Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers · CPC title
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