Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
Layered body having a single crystal layer
US9297093B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9297093-B2 |
| Application number | US-201013498344-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 28, 2010 |
| Priority date | Sep 28, 2009 |
| Publication date | Mar 29, 2016 |
| Grant date | Mar 29, 2016 |
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Abstract
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A layered body having a single crystal layer including a group III nitride having a composition Al x Ga y In z N (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×10 20 cm −3 or more and 5×10 21 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A layered body having a single crystal layer comprising a group III nitride satisfying a composition shown by Al X Ga Y In Z N (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate, and said layered body has an initial single crystal layer comprising the group III nitride satisfying said composition and containing oxygen in a concentration of 1×10 20 cm −3 or more and 5×10 21 cm −3 or less in a thickness of 15 nm or more and 40 nm or less on said sapphire substrate, and a second group III nitride single crystal layer comprising the group III nitride satisfying said composition having reduced oxygen concentration than the initial single crystal layer. 2. The layered body as set forth in claim 1 wherein a surface of said second nitride single crystal layer is a group III polarity plane. 3. A semiconductor device comprising the layered body as set forth in claim 1 . 4. A semiconductor device comprising the layered body as set forth in claim 2 . 5. A layered body, comprising: an initial single crystal layer comprising a group III nitride having a composition shown by Al X Ga Y In Z N, wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0, and containing oxygen in a concentration of 1×10 20 cm −3 to 5×10 21 cm −3 in a thickness of 15 nm to 40 nm on a sapphire substrate, and a second group III nitride single crystal layer comprising a group III nitride satisfying said composition having reduced oxygen concentration than the initial single crystal layer.
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Classifications
Nitrides · CPC title
Nitrides · CPC title
Crystal orientations · CPC title
being crystalline insulating materials · CPC title
- H10P14/24Primary
using chemical vapour deposition [CVD] · CPC title
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- What does patent US9297093B2 cover?
- A layered body having a single crystal layer including a group III nitride having a composition Al x Ga y In z N (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×10 20 cm…
- Who is the assignee on this patent?
- Kinoshita Toru, Takada Kazuya, Tokuyama Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/24. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).