Wide-band acoustically coupled thin-film BAW filter

Patent metadata

Field	Value
Publication number	US-9294069-B2
Application number	US-201113642155-A
Country	US
Kind code	B2
Filing date	Apr 21, 2011
Priority date	Apr 23, 2010
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE 1 and the second harmonic thickness shear (TS 2 ) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.

First claim

The invention claimed is:

1. An acoustic filter comprising;
a stack of materials suitable for an acoustic filter, the stack comprising at least one piezoelectric layer,
at least two resonators having a width and a gap between them and comprising electrodes on different sides of the piezoelectric layer, where the electrodes on at least one side of the piezoelectric layer are separated to form at least two resonator regions,
wherein the stack of materials, width and gap between the separated electrodes being adapted to produce at least two distinct acoustic plate wave modes each contributing at least one lateral standing wave resonance in the acoustic filter,
wherein a structure is adapted to trap the at least two distinct plate wave modes having a total of at least three lateral standing wave resonances in the acoustic filter
wherein the piezoelectric layer is selected from symmetry group 6 mm, with their c-axis in a tilted orientation.

2. The acoustic filter according to claim 1 , wherein the electrodes on only one side of the piezoelectric layer are separated to form at least two resonator regions and there is provided a continuous electrode on the other side of the piezoelectric layer.

3. The acoustic filter according to claim 1 , wherein the electrodes on both sides of the piezoelectric layer are separated to form at least two resonator regions.

4. The acoustic filter according to claim 3 , wherein at least two of the electrodes are electrically connected to provide a balanced electrical port.

5. The acoustic filter according to claim 1 , wherein at least two of said at least three lateral standing wave resonances arise for one plate wave mode and at least one of said at least three lateral standing wave resonances arise for another plate wave mode.

6. The acoustic filter according to claim 1 , wherein the structure is adapted to trap at least two distinct plate wave modes having a total of at least four lateral standing wave resonances in the acoustic filter.

7. The acoustic filter according to claim 1 , wherein the at least two distinct acoustic plate wave modes comprising at least one longitudinal mode and at least one shear mode.

8. The acoustic filter according to claim 1 , comprising at least two piezoelectric layers in stacked configuration.

9. The acoustic filter according to claim 1 , wherein a electric vertical field is coupled to both longitudinal acoustic wave and shear wave.

10. The acoustic filter according to claim 1 , wherein symmetry group and crystal orientation of the piezoelectric layer forms an intrinsic coupling with vertical electric field in both longitudinal and shear acoustic thickness modes.

11. The acoustic filter according to claim 1 , wherein the piezoelectric layer is formed from AN or ZnO.

12. A method of manufacturing an acoustic wide-band filter comprising the steps of;
selecting a structure design and materials for the filter,
designating a desired center frequency and bandwidth,
whereby designing a stack using the selected structure design and materials along with a set of resonators having a width and gap between them so that coupling to at least two distinct laterally propagating thickness vibration plate wave modes is achieved having a total of at least two resonances, and
fabricating the designed filter stack so that it couples the at least two distinct laterally propagating thickness vibration plate wave modes having the total of at least two resonances,
wherein designing the stack so that the designated center frequency is between the onset frequencies of the at least two distinct plate wave modes, and the frequency difference between the onset frequencies two distinct plate modes is approximately one third the desired bandwidth.

13. The method of claim 12 , wherein the stack includes at least one piezoelectric layer.

14. The method of claim 13 , wherein symmetry group and crystal orientation of the at least one piezoelectric layer is selected so as to form an intrinsic coupling with vertical electric field in both longitudinal and shear acoustic thickness modes.

Assignees

• Meltaus Johanna
• Pensala Tuomas
• Teknologian Tutkimuskeskus Vtt Oy

Inventors

• Meltaus Johanna
• Pensala Tuomas

Classifications

• H03H9/584

  Coupled Resonator Filters [CFR] · CPC title

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H9/02125

  of parasitic elements · CPC title

• H03H9/177

  of the energy-trap type · CPC title

• H03H9/02007

  of bulk acoustic wave devices · CPC title