System and method for selected pump LEDs with multiple phosphors

Patent metadata

Field	Value
Publication number	US-9293667-B2
Application number	US-201113211145-A
Country	US
Kind code	B2
Filing date	Aug 16, 2011
Priority date	Aug 19, 2010
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

First claim

What is claimed is:

1. An optical device comprising:
a mounting member;
at least one light emitting diode (LED) provided overlying a portion of the mounting member; the at least one LED including a gallium and nitrogen containing substrate having:
a surface region characterized by a polar crystallographic orientation and a dislocation density less than 1×10 7 dislocations/cm 2 ;
a junction region comprising an active region, the active region being configured to emit electromagnetic radiation within a range from 405 to 430 nanometers; and
a first electrical contact region and a second electrical contact region coupled to the junction region to supply electrical current capable of causing the active region to emit the electromagnetic radiation; and

a mixture of phosphor materials including a first phosphor material, a second phosphor material, and a third phosphor material within a binder material, the mixture of phosphor materials disposed within a vicinity of the at least one LED and configured to interact with the electromagnetic radiation to substantially convert the electromagnetic radiation within the wavelength range from 405 nm to 430 nm to wavelengths within a range from 440 nm to 650 nm;
wherein the first phosphor material comprises a blue phosphor characterized by peak absorption in a wavelength range from 405 nm to 430 nm and has an internal quantum efficiency of at least 70%; and
wherein the optical device emits substantially white light.

2. The device of claim 1 wherein the gallium and nitrogen containing substrate is bulk GaN characterized by a non-polar orientation or a semi-polar orientation.

3. The device of claim 1 wherein the at least one LED has a lumen per watt efficiency of at least 50%.

4. The device of claim 1 wherein the at least one LED comprises a plurality of LEDs in an array configuration.

5. The device of claim 4 wherein the wavelength of the plurality of LEDs varies across the array.

6. The device of claim 1 wherein the first phosphor material comprises a blue phosphor with an absorption coefficient in the range from 1 to 40 cm −1 .

7. The device of claim 1 wherein the blue phosphor is characterized by a peak emission wavelength in the range between 440 nm and 480 nm and a spectral FWHM of at least 10 nm.

8. The device of claim 1 wherein the blue phosphor is characterized by an absorption coefficient in the range from 1 cm −1 to 40 cm −1 and a peak emission wavelength in the range between 440 nm and 480 nm, and a spectral FWHM greater than 10 nm.

9. The device of claim 1 wherein
the blue phosphor is selected from BaMgAl 10 O 17 :Eu 2+ , Sr 2 P 2 O 7 :Eu 2+ , Sr 6 P 5 BO 20 :Eu 2+ , (SrCa) 2 B 5 O 9 Cl:Eu 2+ , Sr 5 Cl(PO 4 ) 3 :Eu 2+ , Ca 2 P 2 O 7 :Eu 2+ , ZnS:Ag,Cl, Sr 10 (PO 4 ) 6 Cl 2 :Eu 2+ , LaAl(Si 6-z Al z )N 10-z O z :Ce 3+ , a-Sialon:Ce 3+ , (Y,La)—Si—O—N:Ce 3+ , Gd 1-x Sr 2+ 2+x AlO 5-x F x :Ce 3+ , and a combination of any of the foregoing; and
the blue phosphor is characterized by a peak absorption at a wavelength between 405 nm and 430 nm, and an absorption not less than 50% of the peak absorption at wavelengths from 405 nm to 430 nm.

10. The device of claim 1 wherein the mixture of phosphor materials is balanced to produce radiation on or near the Planckian curve (du′v′<0.01) with average color rendering of at least 75.

11. The device of claim 1 wherein, the electromagnetic radiation from the active region is substantially free from wavelengths less than 405 nanometers and greater than 440 nanometers.

12. The device of claim 1 where the mixture of phosphors varies in either a horizontal or a vertical direction of the device.

13. The device of claim 1 wherein the gallium and nitrogen containing substrate is bulk GaN characterized by a polar orientation.

14. The device of claim 1 , wherein,
the phosphor mix comprises a phosphor selected from BaMgAl 10 O 17 :Eu 2+ , Sr 10 (PO 4 ) 6 C l2 :Eu 2+ , LaAl(Si 6-z Al z O)N 10-z O z :Ce 3+ , a-Sialon:Ce 3+ , (Y,La)SiON:Ce 3+ , Gd 1-x Sr 2+x AlO 5-x F x :Ce 3+ , and a combination of any of the foregoing, and
the blue phosphor is characterized by a peak absorption at a wavelength between 405 nm and 430 nm, and an absorption not less than 50% of the peak absorption at wavelengths from 405 nm to 430 nm.

15. The device of claim 1 , wherein the at least one LED is configured to maintain an internal quantum efficiency of at least 70% at a current density of at least 100 A/cm 2 and a junction temperature of at least 100° C.

16. The device of claim 1 , wherein the luminescence intensity is within about ±5%.

17. The device of claim 1 , wherein the blue phosphor has an absorption greater than 30.7% of the peak absorption in the wavelength range of 405 nm to 430 nm.

18. The device of claim 17 , wherein the blue phosphor has an absorption not less than 50% of the peak absorption in the wavelength range of 405 nm to 430 nm.

19. An optical device comprising:
at least one light emitting diode (LED) disposed over a portion of a mounting member; the at least one LED having a gallium and nitrogen containing substrate with a surface region, wherein the surface region has a dislocation density less than 1×10 7 dislocations/cm 2 ; a junction region including an active region, the active region emitting electromagnetic radiation within a range from 405 nanometers to 430 nanometers; and a first electrical contact region and a second electrical contact region coupled to the junction region to supply electrical current to cause the active region to emit the electromagnetic radiation;
a color conversion material disposed near the at least one LED, wherein the color conversion material comprises a blue phosphor characterized by peak absorption in the wavelength range from 405 nm to 430 nm, an internal quantum efficiency of at least 70% in said wavelength range,
the active region is configured to emit the electromagnetic radiation within a range from 405 nanometers to 430 nanometers while reducing at least a piezoelectric field influence to cause the active region to output at least 100 Amps/centimeter 2 and to maintain an internal quantum efficiency of at least about 70%, and a temperature ranging from about 85° C. to about 150° C.; and wherein the electromagnetic radiation is substantially free from wavelengths less than 405 nanometers and greater than 440 nanometers; wherein,
leakage of the electromagnetic radiation from the color conversion material is from about 4% to about 6%; and
the optical device emits substantially white light.

20. The device of claim 19 wherein the gallium and nitrogen containing substrate is bulk GaN, the bulk GaN being selected from a semi-polar orientation, a non-polar orientation, and a polar orientation.

21. The device of claim 19 wherein the gallium and nitrogen containing substrate is characterized by a dislocation density of less than 1E7 cm −2 .

22. The device of claim 19 wherein the color conversion material comprises a first color conversion material and a second conversion material, the first color conversion material and the second color conversion material being associated with different wavelengths.

23. The device of claim 19 wherein,
the blue phosphor is selected from BaMgAl 10 O 17 :Eu 2+ , Sr 2 P 2 O 7 :Eu 2+ , Sr 6 P 5 BO 20 :Eu 2+ , (SrCa) 2 B 5 O 9 Cl:Eu 2+ , Sr 5 Cl(PO 4 ) 3 :Eu 2+ , Ca 2 P 2 O 7 :Eu 2+ , ZnS:Ag,Cl, Sr 10 (PO 4 ) 6 Cl 2 :Eu 2+ , LaAl(Si 6-z Al z )N 10-z O z :Ce 3+ , a-Sialon:Ce 3+ , (Y,La)—Si—O—N:Ce

Assignees

• David Aurelien J F
• Chakraborty Arpan
• Krames Michael Ragan
• Trottier Troy
• Soraa Inc

Inventors

• David Aurelien J F
• Chakraborty Arpan
• Krames Michael Ragan
• Trottier Troy

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/7774

  Aluminates · CPC title

• H10H20/853

  characterised by their shape · CPC title

• H10H20/8506

  Containers · CPC title