Display device

US9293601B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9293601-B2
Application numberUS-201514732874-A
CountryUS
Kind codeB2
Filing dateJun 8, 2015
Priority dateJul 31, 2009
Publication dateMar 22, 2016
Grant dateMar 22, 2016

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  1. Title

    What the patent document calls the invention.

  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

First claim

Opening claim text (preview).

The invention claimed is: 1. A display device comprising a plurality of pixels, each of the plurality of pixels comprising: a first conductive layer over a first substrate; a second conductive layer over the first substrate; a first insulating layer over the first conductive layer; a semiconductor layer over the first insulating layer, the semiconductor layer overlapping with the first conductive layer with the first insulating layer therebetween; a second insulating layer over the semiconductor layer, the second insulating layer including a first contact hole and a second contact hole, wherein the second insulating layer covers a periphery of the semiconductor layer; a third conductive layer over the second insulating layer, the third conductive layer electrically connected to the semiconductor layer through the first contact hole; a fourth conductive layer over the second insulating layer, the fourth conductive layer electrically connected to the semiconductor layer through the second contact hole; a third insulating layer over the third conductive layer and the fourth conductive layer, the third insulating layer over a third contact hole; a pixel electrode over the third insulating layer, the pixel electrode electrically connected to one of the third conductive layer and the fourth conductive layer through the third contact hole; a first alignment film over the pixel electrode; a liquid crystal layer over the first alignment film; the liquid crystal layer including a liquid crystal; a second alignment film over the liquid crystal layer; and a second substrate over the second alignment film, wherein the pixel electrode overlaps with the second conductive layer with the third insulating layer therebetween, wherein an electric field is generated between the second conductive layer and the pixel electrode; wherein an alignment of the liquid crystal is controlled with the electric field, wherein the first conductive layer is a part of a first wiring, wherein the other of the third conductive layer and the fourth conductive layer is a part of a second wiring, wherein the first insulating layer and the second insulating layer are provided between the first wiring and the second wiring, and wherein an entirety of the semiconductor layer overlaps with the first conductive layer. 2. The display device according to claim 1 , wherein the second conductive layer is in contact with the first substrate. 3. The display device according to claim 1 , wherein the pixel electrode further overlaps with the second conductive layer with the first insulating layer and the second insulating layer therebetween. 4. The display device according to claim 1 , further comprising: a fifth conductive layer in contact with the first substrate; wherein the fifth conductive layer is in contact with the second conductive layer. 5. The display device according to claim 1 , wherein a region over laps with a channel formation region in the semiconductor layer, and wherein the third insulating layer is in contact with the second insulating layer in the region. 6. A display device comprising a plurality of pixels, each of the plurality of pixels comprising: a first conductive layer over a first substrate; a second conductive layer over the first substrate; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer overlapping with the first conductive layer with the first insulating layer therebetween; a second insulating layer over the oxide semiconductor layer, the second insulating layer including a first contact hole and a second contact hole, wherein the second insulating layer covers a periphery of the oxide semiconductor layer; a third conductive layer over the second insulating layer, the third conductive layer electrically connected to the oxide semiconductor layer through the first contact hole; a fourth conductive layer over the second insulating layer, the fourth conductive layer electrically connected to the oxide semiconductor layer through the second contact hole; a third insulating layer over the third conductive layer and the fourth conductive layer, the third insulating layer over a third contact hole; a pixel electrode over the third insulating layer, the pixel electrode electrically connected to one of the third conductive layer and the fourth conductive layer through the third contact hole; a first alignment film over the pixel electrode; a liquid crystal layer over the first alignment film; the liquid crystal layer including a liquid crystal; a second alignment film over the liquid crystal layer; and a second substrate over the second alignment film, wherein the pixel electrode overlaps with the second conductive layer with the third insulating layer therebetween, wherein an electric field is generated between the second conductive layer and the pixel electrode; wherein an alignment of the liquid crystal is controlled with the electric field, wherein the first conductive layer is a part of a first wiring, wherein the other of the third conductive layer and the fourth conductive layer is a part of a second wiring, wherein the first insulating layer and the second insulating layer are provided between the first wiring and the second wiring, and wherein an entirety of the oxide semiconductor layer overlaps with the first conductive layer. 7. The display device according to claim 6 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc. 8. The display device according to claim 6 , wherein the second conductive layer is in contact with the first substrate. 9. The display device according to claim 6 , wherein the pixel electrode further overlaps with the second conductive layer with the first insulating layer and the second insulating layer therebetween. 10. The display device according to claim 6 , further comprising: a fifth conductive layer in contact with the first substrate; wherein the fifth conductive layer is in contact with the second conductive layer. 11. The display device according to claim 6 , wherein a region over laps with a channel formation region in the oxide semiconductor layer, and wherein the third insulating layer is in contact with the second insulating layer in the region.

Assignees

Inventors

Classifications

  • Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers · CPC title

  • formed on a semiconductor substrate, e.g. of silicon · CPC title

  • Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title

  • Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

  • in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

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What does patent US9293601B2 cover?
An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering …
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H10D30/6755. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).