Laser crystallization apparatus and method

Patent metadata

Field	Value
Publication number	US-9293567-B2
Application number	US-201313828242-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Jul 10, 2012
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A laser crystallization apparatus includes a laser generator that generates a laser beam, a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage is relatively movable such that the laser beam scans the object thin film for crystallization, and a reflection mirror that secondly reflects a second reflection laser beam to the object thin film from a first reflection laser beam that is reflected from the object thin film to the reflection mirror.

First claim

What is claimed is:

1. A laser crystallization apparatus, comprising:
a laser generator that generates a laser beam;
a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage being relatively movable such that the laser beam scans the object thin film for crystallization; and
a reflection mirror that secondly reflects a second reflection laser beam to the object thin film from a first reflection laser beam that is reflected from the object thin film to the reflection mirror.

2. The laser crystallization apparatus of claim 1 , wherein an assistance incident path through which the first reflection laser beam is incident to the reflection mirror is the same as another assistance reflection path of the second reflection laser beam reflected from the reflection mirror.

3. The laser crystallization apparatus of claim 2 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is the same as an inclination angle of the reflection mirror.

4. The laser crystallization apparatus of claim 3 , wherein the inclination angle of the reflection mirror is an inclination angle of a horizontal surface of the reflection mirror with reference to a horizontal surface of the object thin film.

5. The laser crystallization apparatus of claim 1 , wherein an assistance incident angle at which the first reflection laser beam is incident to the reflection mirror is larger than zero degrees.

6. The laser crystallization apparatus of claim 5 , wherein the assistance incident angle is the same as a reflection angle of the second reflection laser beam reflected by the reflection mirror.

7. The laser crystallization apparatus of claim 6 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is larger than an inclination angle of the reflection mirror.

8. A laser crystallization apparatus, comprising:
a laser generator that generates a laser beam;
a stage mounted with an object substrate with an object thin film to which the laser beam is firstly incident, the stage being relatively movable such that the laser beam scans the object thin film for crystallization;
a reflection mirror that reflects a first reflection laser beam, the first reflection laser beam being reflected by the object thin film; and
a transflective mirror that secondly reflects a second reflection laser beam reflected by the reflection mirror to the object thin film.

9. The laser crystallization apparatus of claim 8 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is smaller than an inclination angle of the reflection mirror.

10. The laser crystallization apparatus of claim 9 , wherein the transflective mirror is positioned along a first incident path through which the laser beam is firstly incident to the object thin film.

11. The laser crystallization apparatus of claim 1 , wherein a surface of the reflection mirror has a concave mirror shape.

12. A laser crystallization method, comprising:
reflecting a laser beam generated by a laser generator to an object thin film mounted on a stage to firstly crystallize the object thin film;
reflecting a first reflection laser beam reflected by the object thin film back to the object thin film as a second reflection laser beam with a reflection mirror positioned above the object thin film, to secondly crystallize the object thin film; and
moving the object thin film.

13. The laser crystallization method of claim 12 , wherein an assistance incident path through which the first reflection laser beam is incident to the reflection mirror is the same as another assistance reflection path of the second reflection laser beam reflected from the reflection mirror.

14. The laser crystallization method of claim 13 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is the same as an inclination angle of the reflection mirror.

15. The laser crystallization method of claim 14 , wherein the inclination angle of the reflection mirror is an inclination angle of a horizontal surface of the reflection mirror with reference to a horizontal surface of the object thin film.

16. The laser crystallization method of claim 12 , wherein an assistance incident angle at which the first reflection laser beam is incident to the reflection mirror is larger than zero degrees.

17. The laser crystallization method of claim 16 , wherein the assistance incident angle is the same as a reflection angle of the second reflection laser beam reflected by the reflection mirror.

18. The laser crystallization method of claim 17 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is larger than an inclination angle of the reflection mirror.

19. The laser crystallization method of claim 18 , wherein a first crystallization region that is firstly crystallized in the object thin film is different from a second crystallization region that is secondly crystallized.

20. The laser crystallization method of claim 19 , wherein the first crystallization region is a thin film transistor region and the second crystallization region is a capacitor region or a resistor region.

21. A laser crystallization method, comprising:
reflecting a laser beam generated from the laser generator to an object thin film mounted on a stage to firstly crystallize the object thin film;
reflecting a first reflection laser beam reflected by the object thin film to a transflective mirror with a reflection mirror positioned above the object thin film;
reflecting a second reflection laser beam reflected by the reflection mirror to the object thin film with the transflective mirror to secondly crystallize the object thin film; and
moving the object thin film.

22. The laser crystallization method of claim 21 , wherein a reflection angle of the first reflection laser beam reflected by the object thin film is smaller than an inclination angle of the reflection mirror.

23. The laser crystallization method of claim 22 , wherein the transflective mirror is positioned along a first path through which the laser beam is firstly incident to the object thin film.

24. The laser crystallization method of claim 23 , wherein a first crystallization region that is firstly crystallized in the object thin film is the same as a second crystallization region that is secondly crystallized.

25. The laser crystallization method of claim 23 , wherein a first crystallization region that is firstly crystallized in the object thin film is different from a second crystallization region that is secondly crystallized.

26. The laser crystallization method of claim 25 , wherein the first crystallization region is a thin film transistor region and the second crystallization region is a capacitor region or a resistor region.

Assignees

• Kim Sung-Ho
• Choi Min-Hwan
• Samsung Display Co Ltd

Inventors

• Kim Sung-Ho
• Choi Min-Hwan

Classifications

• H10P14/3808

  using laser beams · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title