Silicon carbide semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9293549-B2
Application number	US-201213658672-A
Country	US
Kind code	B2
Filing date	Oct 23, 2012
Priority date	Nov 21, 2011
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.

First claim

What is claimed is:

1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer having a thickness direction, and having a first main surface and a second main surface opposite to said first main surface in said thickness direction, said silicon carbide layer including a first region forming said first main surface and having a first conductivity type, a second region provided on said first region and having a second conductivity type different from said first conductivity type, and a third region provided on said second region and having said first conductivity type, a trench having an inner surface being formed in said second main surface of said silicon carbide layer, said trench penetrating said second and third regions;
a gate insulating film covering said inner surface of said trench; and
a gate electrode filling at least a portion of said trench,
wherein said inner surface of said trench has a first side wall inclining with respect to the second main surface and a second side wall located deeper than said first side wall and having a portion made of said second region, and inclining with respect to the second main surface,
wherein said second side wall connects a boundary between said first and second regions with a boundary between said second and third regions,
wherein said second side wall includes {0-33-8} plane or {01-1-4} plane,
wherein a boundary between said first side wall and said second side wall is located at said boundary between said second region and said third region or in said third region, and
wherein an angle of inclination of said first side wall with respect to the second main surface is different than an angle of inclination of said second side wall with respect to the second main surface.

2. The silicon carbide semiconductor device according to claim 1 , wherein said gate electrode fills the trench until said gate electrode reaches at least between said first and second side walls.

Assignees

• Sumitomo Electric Industries
• Nat Univ Corp Nara Inst

Inventors

• Masuda Takeyoshi
• Hatayama Tomoaki

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10D30/0297

  using recessing of the gate electrodes, e.g. to form trench gate electrodes · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title