Self-light-emitting device comprising protective portions on a pixel electrode

Patent metadata

Field	Value
Publication number	US-9293513-B2
Application number	US-201414284872-A
Country	US
Kind code	B2
Filing date	May 22, 2014
Priority date	Feb 22, 2000
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41 b , failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

First claim

What is claimed is:

1. A light-emitting device comprising:
a substrate;
a semiconductor film over the substrate;
a gate electrode over the substrate and overlapping with the semiconductor film;
a gate insulating film interposed between the semiconductor film and the gate electrode, the gate insulating film comprising silicon;
a first interlayer insulating film over the semiconductor film, the gate electrode, and the gate insulating film, the first interlayer insulating film comprising silicon;
a wiring on the first interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor film via the first contact hole formed in the first interlayer insulating film;
a second interlayer insulating film over the wiring, the second interlayer insulating film comprising a first organic resin;
a pixel electrode on the second interlayer insulating film and in electrical contact with the wiring via a second contact hole formed in the second interlayer insulating film;
a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;
an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; and
a common electrode on the EL layer and overlapping the pixel electrode.

2. The light-emitting device according to claim 1 , further comprising a passivation film comprising silicon between the second interlayer insulating film and each of the wiring and the first interlayer insulating film.

3. A light-emitting device comprising:
a substrate;
a base film on the substrate, the base film being an insulating film having a laminated structure and comprising silicon, nitrogen, and oxygen;
a polycrystal silicon film on the base film;
a gate insulating film comprising silicon, nitrogen, and oxygen on the polycrystal silicon film;
a gate electrode on the gate insulating film and overlapping the polycrystal silicon film, the gate electrode comprising molybdenum;
a first interlayer insulating film on the gate electrode and on the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;
a wiring on the first interlayer insulating film and in direct contact with the polycrystal silicon film in a first contact hole formed in the first interlayer insulating film and the gate insulating film, the wiring having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;
a second interlayer insulating film over the wiring and the first interlayer insulating film, the second interlayer insulating film comprising a first organic resin;
a pixel electrode on and in direct contact with the second interlayer insulating film, and in direct contact with the wiring via a second contact hole formed in the second interlayer insulating film;
a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;
an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; and
a common electrode on the EL layer and overlapping the pixel electrode.

4. The light-emitting device according to claim 3 , further comprising a passivation film between the second interlayer insulating film and each of the wiring and the first interlayer insulating film.

5. The light-emitting device according to claim 3 ,
wherein the second protective portion fills up the second contact hole.

6. The light-emitting device according to claim 3 ,
wherein the substrate is a glass substrate.

7. The light-emitting device according to claim 3 ,
wherein the substrate is a plastic substrate.

8. The light-emitting device according to claim 3 ,
wherein the first protective portion and the second protective portion are separated from each other.

9. The light-emitting device according to claim 3 ,
wherein the first protective portion is formed continuously between the pixel electrode and adjacent pixel electrodes.

10. The light-emitting device according to claim 3 ,
wherein the first protective portion is an insulating monolayer made of the second organic resin and thicker than the pixel electrode.

11. The light-emitting device according to claim 3 ,
wherein the second interlayer insulating film is made of the first organic resin.

12. The light-emitting device according to claim 3 ,
wherein the first organic resin is chosen among the group consisting of a polyimide resin, a first polyamide resin, a first acrylic resin, and a resin containing a high molecular compound of siloxane, and
wherein the second organic resin is chosen among the group consisting of a second acrylic resin and a second polyamide resin.

13. The light-emitting device according to claim 3 ,
wherein the second interlayer insulating film has a thickness comprised between 1 μm and 5 μm.

14. The light-emitting device according to claim 3 ,
wherein the first protective portion has a thickness comprised between 1 μm and 2 μm.

15. The light-emitting device according to claim 3 ,
wherein the first contact hole and the second contact hole overlap each other.

16. The light-emitting device according to claim 3 ,
the light-emitting device being an active matrix light-emitting display device comprising an external input/output terminal and a driver circuit on the substrate.

17. A light-emitting device comprising:
a substrate;
a base film on the substrate, the base film being an insulating film having a laminated structure and comprising silicon, nitrogen, and oxygen;
a polycrystal silicon film on the base film;
a gate insulating film comprising silicon on the polycrystal silicon film;
a gate electrode on the gate insulating film and overlapping the polycrystal silicon film, the gate electrode comprising molybdenum;
a first interlayer insulating film on the gate electrode and on the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;
a wiring on the first interlayer insulating film and in direct contact with the polycrystal silicon film in a first contact hole formed in the first interlayer insulating film and the gate insulating film, the wiring having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;
a first passivation film on and in contact with the wiring and the first interlayer insulating film, the first passivation film comprising silicon and nitrogen;
a second interlayer insulating film on and in contact with the first passivation film, the second interlayer insulating film comprising a first organic resin;
a pixel electrode on and in direct contact with the second interlayer insulating film, in a second contact hole formed in the second interlayer insulating film, and in direct contact with a side portion of the first passivation film and on and in direct contact with the wiring in a third contact hole formed in the f

Assignees

• Semiconductor Energy Lab

Inventors

• Konuma Toshimitsu
• Maruyama Junya

Classifications

• H10K59/8722

  Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title

• H10K59/124

  Insulating layers formed between TFT elements and OLED elements · CPC title

• H10D86/00 Primary

  Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates · CPC title

• H10D30/6733

  Multi-gate TFTs · CPC title

• H10D30/6719

  having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs · CPC title