Semiconductor device

Patent metadata

Field	Value
Publication number	US-9293427-B2
Application number	US-201414151269-A
Country	US
Kind code	B2
Filing date	Jan 9, 2014
Priority date	Mar 4, 2011
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A semiconductor device includes an antenna functioning as a coil, a capacitor electrically connected to the antenna in parallel, a passive element forming a resonance circuit with the antenna and the capacitor by being electrically connected to the antenna and the capacitor in parallel, a first field effect transistor controlling whether the passive element is electrically connected to the antenna and the capacitor in parallel or not, and a memory circuit. The memory circuit includes a second field effect transistor which includes an oxide semiconductor layer where a channel is formed and in which a data signal is input to one of a source and a drain. The gate voltage of the first field effect transistor is set depending on the voltage of the other of the source and the drain of the second field effect transistor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a coil;
a capacitor electrically connected to the coil in parallel;
a passive element that forms a resonance circuit with the coil and the capacitor by being electrically connected to the coil and the capacitor in parallel;
a first transistor capable of controlling whether the passive element is electrically connected to the coil and the capacitor in parallel or not; and
a memory circuit,
wherein the memory circuit includes:
a second transistor that comprises a semiconductor layer including a channel, the channel including an oxide semiconductor;
a second capacitor; and
a third transistor in which a voltage of one of a source and a drain of the third transistor is changed in accordance with an electric wave received by the coil, the other one of the source and the drain of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is directly connected to one of a source and a drain of the second transistor and one of electrodes of the second capacitor.

2. The semiconductor device according to claim 1 , wherein a data signal is input to the other one of the source and the drain of the second transistor.

3. The semiconductor device according to claim 1 , wherein the passive element is one of a capacitor and a coil.

4. The semiconductor device according to claim 1 , wherein the oxide semiconductor is an In—Ga—Zn-based oxide semiconductor.

5. The semiconductor device according to claim 1 , further comprising a rectifier circuit whose first terminal is electrically connected to the first terminal of the coil and whose second terminal is electrically connected to the second terminal of the coil.

6. The semiconductor device according to claim 1 , wherein the oxide semiconductor is an In—Sn—Zn based oxide semiconductor.

7. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises crystalline portions whose c-axes are aligned in a direction perpendicular to a surface of the semiconductor layer, and wherein each of the crystalline portions is not a single crystal.

8. The semiconductor device according to claim 1 , wherein off-state current per micrometer of a channel width of the second transistor is lower than 1×10 −17 A.

9. A semiconductor device comprising:
an antenna;
a capacitor whose first terminal is electrically connected to a first terminal of the antenna and whose second terminal is electrically connected to a second terminal of the antenna;
a passive element whose first terminal is electrically connected to the first terminal of the capacitor;
a first transistor whose one of a source and a drain is electrically connected to a second terminal of the passive element and whose the other one of the source and the drain is electrically connected to the second terminal of the capacitor;
a second transistor that comprises a semiconductor layer including a channel, the channel including an oxide semiconductor;
a second capacitor; and
a third transistor whose one of a source and a drain is electrically connected to the first terminal of the passive element, whose the other one of the source and the drain is electrically connected to a gate of the first transistor, and whose gate is directly connected to one of a source and a drain of the second transistor and one of electrodes of the second capacitor.

10. The semiconductor device according to claim 9 , wherein a data signal is input to the other one of the source and the drain of the second transistor.

11. The semiconductor device according to claim 9 , wherein the passive element is one of a capacitor and a coil.

12. The semiconductor device according to claim 9 , wherein the oxide semiconductor is an In—Ga—Zn-based oxide semiconductor.

13. The semiconductor device according to claim 9 , further comprising a rectifier circuit whose first terminal is electrically connected to the first terminal of the antenna and whose second terminal is electrically connected to the second terminal of the antenna.

14. The semiconductor device according to claim 9 , wherein the oxide semiconductor is an In—Sn—Zn based oxide semiconductor.

15. The semiconductor device according to claim 9 , wherein the semiconductor layer comprises crystalline portions whose c-axes are aligned in a direction perpendicular to a surface of the semiconductor layer, and wherein each of the crystalline portions is not a single crystal.

16. The semiconductor device according to claim 9 , wherein off-state current per micrometer of a channel width of the second transistor is lower than 1×10 −17 A.

Assignees

• Semiconductor Energy Lab

Inventors

• Yoneda Seiichi

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/495

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title