Random access memory architecture for reading bit states

US9293182B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9293182-B2
Application numberUS-201213688390-A
CountryUS
Kind codeB2
Filing dateNov 29, 2012
Priority dateDec 15, 2011
Publication dateMar 22, 2016
Grant dateMar 22, 2016

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Abstract

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An architecture and method includes providing an oscillatory signal through each magnetic tunnel junction (MTJ), or in a line adjacent each MTJ, in a magnetoresistive random access memory array. A rectified signal appearing across each MTJ is measured and compared to a reference signal for determining the state of the MTJ.

First claim

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The invention claimed is: 1. A method of reading a data state stored in a magnetic tunnel junction cell, the method comprising: applying an oscillating signal to the magnetic tunnel junction cell to read the data state stored therein, wherein applying the oscillating signal includes applying an oscillating voltage across the magnetic tunnel junction cell that causes an oscillating resistance of the magnetic tunnel junction cell, wherein the oscillating resistance of the magnetic t…

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What does patent US9293182B2 cover?
An architecture and method includes providing an oscillatory signal through each magnetic tunnel junction (MTJ), or in a line adjacent each MTJ, in a magnetoresistive random access memory array. A rectified signal appearing across each MTJ is measured and compared to a reference signal for determining the state of the MTJ.
Who is the assignee on this patent?
Everspin Technologies Inc
What technology area does this patent fall under?
Primary CPC classification G11C11/1673. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).