Positive and negative magnetostriction ultrahigh linear density sensor

Patent metadata

Field	Value
Publication number	US-9293159-B2
Application number	US-201514610771-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Jan 31, 2014
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

First claim

What is claimed is:

1. An apparatus comprising a magnetic stack disposed between first and second magnetic shields, the magnetic stack comprising a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations, the first magnetically free lamination comprising a first sub-layer comprising a transition metal material and disposed between a second sub-layer comprising a negative magnetostriction material and a third sub-layer comprising a positive magnetostriction material.

2. The apparatus of claim 1 , wherein the magnetic stack is configured without a fixed magnetization.

3. The apparatus of claim 1 , wherein a fourth sub-layer is disposed between the non-magnetic spacer layer and the third sub-layer, a fifth sub-layer is disposed between the electrode lamination and the second sub-layer, the fourth and fifth sub-layers each being magnetic.

4. The apparatus of claim 1 , wherein the first shield comprises a shield biasing layer and biased shield layer as part of an exchange coupled shield structure, the second shield comprises a shield coupling layer as part of a synthetic antiferromagnetic structure.

5. The apparatus of claim 1 , wherein the second sub-layer is proximal the electrode lamination and the third sub-layer is proximal the non-magnetic spacer and distal the electrode lamination.

6. The apparatus of claim 1 , wherein the negative magnetostriction material comprises one of the group of: Ni, NiFe alloy, Co, and CoB alloy.

7. The apparatus of claim 1 , wherein the positive magnetostriction material comprises CoTa or a CoFe alloy.

8. The apparatus of claim 1 , wherein the first, second, and third sub-layers have different thicknesses as measured parallel to a shield-to-shield spacing of the magnetic stack.

9. An apparatus comprising a magnetic stack disposed between first and second magnetic shields, the magnetic stack comprising a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations, the first magnetically free lamination comprising a first sub-layer comprising a transition metal material and disposed between a second sub-layer comprising a negative magnetostriction material and a third sub-layer comprising a positive magnetostriction material, the first electrode lamination comprising a magnetic seed lamination configured to provide a different crystallographic texture at a first interface between the magnetic seed lamination and a coupling lamination than at a second interface between the magnetic seed lamination and the first shield.

10. The apparatus of claim 9 , wherein the crystallographic texture at the first interface is body-centered cubic or hexagonal close packed and the crystallographic texture at the second interface is face-centered cubic.

11. The apparatus of claim 9 , wherein the magnetic seed lamination comprises a non-magnetic coupling layer disposed between first and second seed sub-layers, the first and second seed sub-layers each being magnetic.

12. The apparatus of claim 11 , wherein a third seed sub-layer is positioned between the second seed sub-layer and the coupling lamination, the third sub-layer being magnetic and the first interface being present on the third seed sub-layer.

13. The apparatus of claim 12 , wherein the first, second, and third seed sub-layers are each different materials.

14. The apparatus of claim 12 , wherein the first, second and third seed sub-layers respectively comprise one of the group of: CoFeB, CoTa, CoFeTa, CoFeBTa, CoFeZr, CoFeZrTa, and CoFeHf.

15. The apparatus of claim 11 , wherein the non-magnetic coupling layer comprises one of the group of: Ta, CoHf, CoZr, CoW, CoB, CoP, CoTa, CoFeTa, and CoFeBTa.

16. An apparatus comprising a magnetic stack disposed between first and second magnetic shields, the magnetic stack comprising a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations, the first magnetically free lamination comprising a first sub-layer comprising a transition metal material and disposed between a second sub-layer comprising a negative magnetostriction material and a third sub-layer comprising a positive magnetostriction material, the electrode lamination comprising a coupling lamination comprising a non-magnetic coupling sub-layer disposed between first and second coupling sub-layers configured to provide RKKY coupling between the first shield and the first free lamination.

17. The apparatus of claim 16 , wherein the first and second coupling sub-layers comprise different magnetic materials.

18. The apparatus of claim 16 , wherein the first and second coupling sub-layers each comprise a Co or CoFe alloy material.

19. The apparatus of claim 16 , wherein the non-magnetic coupling sub-layer, first coupling sub-layer, and second coupling sub-layer have different thicknesses as measured along a shield-to-shield distance of the magnetic stack.

20. The apparatus of claim 19 , wherein the first coupling sub-layer is excluded from the shield-to-shield distance of the magnetic stack.

Assignees

• Seagate Technology Llc

Inventors

• Jung Wonjoon
• Dimitrov Dimitar V
• Kief Mark T

Classifications

• G11B5/3906 Primary

  Details related to the use of magnetic thin film layers or to their effects · CPC title

• G11B5/332 Primary

  using thin films (G11B5/372, G11B5/3903 take precedence) · CPC title

• G11B5/39

  using magneto-resistive devices {or effects} · CPC title

• G11B5/315

  Shield layers on both sides of the main pole, e.g. in perpendicular magnetic heads · CPC title

• H10N50/85

  Materials of the active region · CPC title