Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography
US9291905B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9291905-B2 |
| Application number | US-201514626383-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2015 |
| Priority date | Dec 25, 2009 |
| Publication date | Mar 22, 2016 |
| Grant date | Mar 22, 2016 |
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Abstract
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A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.
First claim
Opening claim text (preview).
What is claimed is: 1. A concentrated developing solution for photolithography, comprising tetrabutylammonium hydroxide (A), a water-soluble organic solvent (B1), and water, wherein the concentration of the tetrabutylammonium hydroxide (A) is 20% to 50% by mass and the component (B1) is a polyhydric alcohol, and wherein a halogen content is 10 ppm or less and a metal ion content is 100 ppb or less. 2. The concentrated developing solution for photolithography according to claim 1 , wherein the developing solution is diluted by adding a solvent when used as a developing solution so that the concentration of the tetrabutylammonium hydroxide (A) is 1% to 10% by mass. 3. The concentrated developing solution for photolithography according to claim 2 , wherein the concentration of the component (B1) is 1 to 10% by mass when the concentrated developing solution is diluted by adding a solvent so that the concentration of the tetrabutylammonium hydroxide (A) is 1% to 10% by mass. 4. The concentrated developing solution for photolithography according to any one of claims 1 to 3 , wherein the polyhydric alcohol is at least one selected from the group consisting of ethylene glycol, propylene glycol, and glycerin. 5. The concentrated developing solution for photolithography according to claim 1 , wherein the solution is used in producing a semiconductor element having a half pitch size of 49 nm or less. 6. The concentrated developing solution for photolithography according to claim 2 , wherein the solution is used in producing a semiconductor element having a half pitch size of 49 nm or less. 7. The concentrated developing solution for photolithography according to claim 3 , wherein the solution is used in producing a semiconductor element having a half pitch size of 49 nm or less.
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Classifications
- G03F7/322Primary
Aqueous alkaline compositions · CPC title
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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- What does patent US9291905B2 cover?
- A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a pr…
- Who is the assignee on this patent?
- Tokyo Ohka Kogyo Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F7/322. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).