Power control system and method for motor preheating
US-2024125829-A1 · Apr 18, 2024 · US
US9291678B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9291678-B2 |
| Application number | US-201213484947-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2012 |
| Priority date | May 31, 2012 |
| Publication date | Mar 22, 2016 |
| Grant date | Mar 22, 2016 |
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For each phase of a controller, a pair of semiconductor switches comprises a high side switch and a low side switch. A direct current voltage bus provides electrical energy to the semiconductor switches at a test voltage level less than a full operational voltage level. A measuring circuit is adapted to measure the direct current bus voltage. A data processor determines that a deficiency in a tested, related semiconductor switch is present if the measured direct current bus voltage decreases or collapses upon activation of a particular semiconductor switch in the same phase of the controller, or if other sequential test results indicate a deficiency. If the deficiency in the related semiconductor switch is present the processor may prevent the voltage supply from providing the full operational voltage to the direct current data bus to prevent damage to the motor or the controller, for example.
Opening claim text (preview).
The following is claimed: 1. A method for determining a deficiency in the operation of a semiconductor switch of a controller, the method comprising: providing electrical energy to the semiconductor switches at a test voltage level less than a full operational voltage level; activating a particular semiconductor switch of a certain phase of the controller; measuring a direct current bus voltage; and determining that a deficiency in a tested, related semiconductor switch is present if the measured direct current bus voltage decreases or collapses by at least a material deviation or at least a transient deviation upon activation of the activated particular semiconductor switch in the same phase of the controller, the material deviation being a threshold difference value between the measured direct current bus voltage and the decreased or collapsed measured direct current bus voltage. 2. The method according to claim 1 further comprising: preventing or inhibiting a voltage supply from providing the full operational voltage level to the direct current bus to prevent damage to the controller, or a motor coupled to the controller, if the deficiency in the related semiconductor switch is present. 3. The method according to claim 1 wherein the determining of the deficiency comprises determining that the deficiency in the related semiconductor switch is present if the measured direct current bus voltage decreases or collapses by at least the material deviation upon activation of the activated particular semiconductor switch in the same phase of the controller and if a current level flowing between switched terminals of the related semiconductor switch, for the same phase, is greater than a maximum current over a sampling time period. 4. The method according to claim 1 wherein the determining of the deficiency comprises determining that the deficiency in the related semiconductor switch is present if the measured direct current bus voltage decreases or collapses by at least the material deviation upon activation of the activated particular semiconductor switch in the same phase of the controller and if a current level flowing between switched terminals of the related semiconductor switch, for the same phase, is greater than a maximum current over a sampling time period to localize the deficiency to a particular deficient phase of an inverter section of the controller. 5. The method according to claim 1 wherein the deficiency comprises a fault or short circuit of the related semiconductor switch. 6. The method according to claim 1 further comprising: simultaneously activating the particular semiconductor switch and the related switch of a certain phase of the controller; and determining that a secondary deficiency in the particular semiconductor switch or the related semiconductor switch is present if the measured direct current bus voltage does not decrease or collapse upon the simultaneous activation of the activated particular semiconductor switch and the related semiconductor switch in the same phase of the controller. 7. The method according to claim 6 wherein the secondary deficiency comprises an open circuit of the particular semiconductor switch or the related semiconductor switch. 8. The method according to claim 1 further comprising: simultaneously activating the particular semiconductor switch and the related switch of different phases of the controller; and determining that a secondary deficiency in the particular semiconductor switch or the related semiconductor switch is present if the observed current through one or more windings of a motor does not exceed a maximum test current threshold during a sampling period. 9. The method according to claim 8 wherein the secondary deficiency comprises an open circuit of the particular semiconductor switch or the related semiconductor switch. 10. The method according to claim 1 , wherein determining determines a deficiency in the tested, related semiconductor switch is present if the measured direct current bus voltage decreases or collapses by the transient deviation, the transient deviation being a deviation from the test voltage level. 11. A method for determining a deficiency in the operation of a semiconductor switch of a controller, the method comprising: turning on a first semiconductor switch for a brake chopper; detecting whether a voltage level of a direct current bus does not decrease while turning on the first semiconductor switch; establishing a chopper fault indicator if the voltage level does not decrease by an amount indicative of the proper functionality of the first semiconductor switch; turning on a particular low side switch of the controller; detecting whether or not a voltage level of the direct current bus decreases by a material deviation or a transient deviation while turning on the particular low side semiconductor switch, the material deviation being a threshold difference value between the measured direct current bus voltage and the decreased or collapsed measured direct current bus voltage; and establishing a high side fault indicator of a high side semiconductor switch for a phase corresponding to the particular low side semiconductor switch if the voltage level decreases by an amount indicative of a fault in a high side switch. 12. The method according to claim 11 further comprising: turning on a particular high side semiconductor switch of the controller; detecting whether or not the voltage level of the direct current bus decreases while turning on the particular high side semiconductor switch; and establishing a low side fault indicator of the low side semiconductor switch for a phase corresponding to the particular high side semiconductor switch if the voltage level decreases by an amount indicative of a fault in a low side semiconductor switch. 13. The method according to claim 11 further comprising: testing each low side semiconductor switch and high side semiconductor switch of the controller for a ground fault or short circuit. 14. The method according to claim 13 further comprising: if no ground fault or short circuit of any semiconductor switch is established or detected, turning on a high side semiconductor switch on a certain phase and a low side semiconductor switch of the certain phase or a different phase to identify any discontinuity or open failure state of the activated high side semiconductor switch or the activated low side semiconductor switch. 15. The method according to claim 14 further comprising: setting a maximum test current threshold lower than a maximum operational current threshold; turning off the activated high side semiconductor switch and the activated low side semiconductor switch if detected current flow through one or more windings of the certain phase exceeds the maximum test current threshold, where no discontinuity or open failure state is identified. 16. The method according to claim 14 further comprising: sequentially turning on pairs of a high side switch and of a low side switch of each phase or different phases until all combinations of the pairs are activated to identify any discontinuity of open failure state of the activated switches. 17. The method according to claim 11 further comprising: if a short is detected on a high side semiconductor switch, turning on a low side semiconductor switch and checking for a current fault, where the detected current between controlled terminals of the high side semiconductor switch exceeds a maximum threshold; triggering an expiration of a diagnostic timer if no fault is detected
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