Optoelectronic device and method for producing an optoelectronic device

Patent metadata

Field	Value
Publication number	US-9287519-B2
Application number	US-201414469636-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Mar 19, 2012
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

An optoelectronic device, comprising: a first organic functional layer structure; a second organic functional layer structure; and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure, wherein the charge generating layer structure comprises: a first electron-conducting charge generating layer; wherein the first electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance; a second electron-conducting charge generating layer; and an interlayer between first electron-conducting charge generating layer; and second electron-conducting charge generating layer; and wherein the interlayer comprises at least one phthalocyanine derivative.

First claim

What is claimed is:

1. An optoelectronic device, comprising:
a first organic functional layer structure;
a second organic functional layer structure; and
a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure, wherein the charge generating layer structure comprises:
a first electron-conducting charge generating layer; wherein the first electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance;
a second electron-conducting charge generating layer; and
an interlayer between first electron-conducting charge generating layer; and second electron-conducting charge generating layer;
wherein the interlayer comprises at least one phthalocyanine derivative; and
wherein the interlayer comprises or is formed from the same substance or the same substance mixture as the substance or the substance mixture of the first electron-conducting charge generating layer, wherein however the substance or the substance mixture has a different physical structure, or wherein the interlayer comprises or is formed from the same substance or the same substance mixture as the substance or the substance mixture of the second electron-conducting charge generating layer, wherein however the substance or the substance mixture has a different physical structure.

2. The optoelectronic device as claimed in claim 1 ,
wherein the substance of the first intrinsically electron-conducting charge generating layer comprises or is formed from HAT-(CN)6, Cu(I)pFBz, MoO x , WO x , VO x , ReO x , F4-TCNQ, NDP-2, NDP-9, bi(III)pFBz or F16CuPc.

3. The optoelectronic device as claimed in claim 1 , wherein the second organic functional layer structure comprises a hole transport layer, and wherein the hole transport layer is formed above or on the first electron-conducting charge generating layer.

4. The optoelectronic device as claimed in claim 3 , wherein the hole transport layer is formed from an intrinsically hole-conducting substance or from a substance mixture comprising matrix and p-type dopant.

5. The optoelectronic device as claimed in claim 1 , wherein the second electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance, or wherein the second electron-conducting charge generating layer is formed from a substance mixture comprising matrix and n-type dopant.

6. The optoelectronic device as claimed in claim 1 , wherein the interlayer comprises or is formed from one substance or a plurality of substances, selected from a group consisting of:
inorganic substance
organic substance
organic-inorganic hybrid substance.

7. The optoelectronic device as claimed in claim 1 , wherein the at least one phthalocyanine derivative comprises or consists of at least one metal phthalocyanine derivative or metal oxide phthalocyanine derivative or unsubstituted phthalocyanine derivative.

8. The optoelectronic device as claimed in claim 7 , wherein the phthalocyanine derivative is selected from the group consisting of: vanadium oxide phthalocyanine (VOPc), titanium oxide phthalocyanine (TiOPc), copper phthalocyanine (CuPc), unsubstituted phthalocyanine (H 2 Pc), cobalt phthalocyanine (CoPc), aluminum phthalocyanine (AlPc), nickel phthalocyanine (NiPc), iron phthalocyanine (FePc), zinc phthalocyanine (ZnPc) or manganese phthalocyanine (MnPC).

9. The optoelectronic device as claimed in claim 1 , wherein the optoelectronic device is designed as an organic light emitting diode.

10. A method for producing an optoelectronic device, the method comprising:
forming a first organic functional layer structure;
forming a charge generating layer structure above or on the first organic functional layer structure; and
forming a second organic functional layer structure above or on the charge generating layer structure, wherein forming the charge generating layer structure comprises:
forming a second electron-conducting charge generating layer;
forming an interlayer above or on the second electron-conducting charge generating layer;
wherein the interlayer comprises at least one phthalocyanine derivative; and
wherein the interlayer comprises or is formed from the same substance or the same substance mixture as the substance or the substance mixture of the first electron-conducting charge generating layer, wherein however the substance or the substance mixture has a different physical structure, or wherein the interlayer comprises or is formed from the same substance or the same substance mixture as the substance or the substance mixture of the second electron-conducting charge generating layer, wherein however the substance or the substance mixture has a different physical structure; and
forming a first electron-conducting charge generating layer above or on the interlayer, wherein the first electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance.

11. The method as claimed in claim 10 ,
wherein the substance of the first intrinsically electron-conducting charge generating layer comprises or is formed from HAT-(CN)6, Cu(I)pFBz, MoO x , WO x , VO x , ReO x , F4-TCNQ, NDP-2, NDP-9, bi(III)pFBz or F16CuPc.

12. The method as claimed in claim 10 ,
wherein the at least one phthalocyanine derivative of the interlayer comprises or consists of at least one metal phthalocyanine derivative or metal oxide phthalocyanine derivative or unsubstituted phthalocyanine derivative.

13. The method as claimed in claim 12 ,
wherein the metal oxide phthalocyanine of the interlayer is selected from the group consisting of: vanadium oxide phthalocyanine (VOPc), titanium oxide phthalocyanine (TiOPc), copper phthalocyanine (CuPc), unsubstituted phthalocyanine (H 2 Pc), cobalt phthalocyanine (CoPc), aluminum phthalocyanine (AlPc), nickel phthalocyanine (NiPc), iron phthalocyanine (FePc), zinc phthalocyanine (ZnPc) or manganese phthalocyanine (MnPC).

14. The method as claimed in claim 10 ,
wherein the optoelectronic device is produced as an organic light emitting diode.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Jaeger Arndt
• Diez Carola
• Niedermeier Ulrich
• Seidel Stefan
• Dobbertin Thomas
• Schmid Guenter

Classifications

• H10K50/15

  Hole transporting layers · CPC title

• H10K85/311 Primary

  Phthalocyanine · CPC title

• H01L51/0078

  Electricity · mapped topic

• H01L51/5056 Primary

  Electricity · mapped topic

• H01L51/5278

  Electricity · mapped topic