Forming pn junction contacts by different dielectrics

Patent metadata

Field	Value
Publication number	US-9287516-B2
Application number	US-201514618618-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Apr 7, 2014
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

A carbon nanotube transistor and method of manufacturing a carbon nanotube transistor is disclosed. The carbon nanotube transistor includes a carbon nanotube on a substrate, a gate electrode deposited on the carbon nanotube, and at least one of a source electrode and a drain electrode deposited on the carbon nanotube and separated from the gate electrode by a space region. The carbon nanotube is doped at the gate electrode an in the space region to form a p-n junction.

First claim

What is claimed is:

1. A carbon nanotube transistor, comprising:
a carbon nanotubes on a substrate;
a gate structure deposited on the carbon nanotube, wherein the gate structure include a layer of first dielectric material for doping the carbon nanotube at the gate structure;
a source electrode deposited on one end of the carbon nanotube and separated from the gate electrode by a first gap;
a drain electrode deposited on an opposite end of the carbon nanotube and separated from the gate electrode by a second gap;
a layer of second dielectric material formed in the first gap for doping the carbon nanotube in the first gap, wherein the second dielectric material is different from the first dielectric material; and
a layer of the second dielectric material formed in the second gap for doping the carbon nanotube in the second gap;
wherein the doped carbon nanotube forms a p-n junction at a transition between the gate structure and the first gap and at a transition between the gate structure and the second gap.

2. The carbon nanotube transistor of claim 1 , wherein the first doping is one of an n-type doping and a p-type doping and the second doping is the other of the n-type doping and the p-type doping.

3. The carbon nanotube transistor of claim 2 , wherein the first dielectric is one of AlON and HfO 2 and the second dielectric is one of AlON and Al 2 O 3 .

4. The carbon nanotube transistor of claim 1 wherein at least one of the first dielectric material and the second dielectric material induces an electrostatic doping effect in the carbon nanotube.

5. The carbon nanotube transistor of claim 1 , wherein the p-n junction is oriented along a longitudinal axis of the carbon nanotube.

6. The carbon nanotube transistor of claim 5 , wherein the orientation of the p-n junction increases an ON/OFF ratio of a drain-source current of the transistor over an ON/OFF ratio of a transistor without the p-n junction.

7. A carbon nanotube transistor, comprising:
a carbon nanotube configured to traverse a gate channel between a source electrode and a drain electrode of the transistor;
a gate structure deposited on the carbon nanotube in the gate channel to provide a first gap between the gate structure and the source electrode and a second gap between the gate structure and the drain electrode, wherein the gate structure includes a first dielectric material for doping the carbon nanotube at the gate structure;
a layer of second dielectric material formed in the first gap for doping the carbon nanotube in the first gap, wherein the second dielectric material is different from the first dielectric material; and
a layer of the second dielectric material formed in the second gap for doping the carbon nanotube in the second gap;
wherein the doped carbon nanotube forms a p-n junction at a transition between the gate structure and the first gap and at a transition between the gate structure and the second gap.

8. The carbon nanotube transistor of claim 7 , further comprising the first dielectric material configured to provide one of an n-type doping and a p-type doping to the carbon nanotube at the gate electrode and the second dielectric material configured to provide the other of the n-type doping and the p-type doping to the carbon nanotube in the space region.

9. The carbon nanotube transistor of claim 8 , wherein the first dielectric is one of AlON and HfO 2 and the second dielectric is one of AlON and Al 2 O 3 .

10. The carbon nanotube transistor of claim 8 , wherein at least one of the first dielectric material and the second dielectric material induces an electrostatic doping effect in the carbon nanotube.

11. The carbon nanotube transistor of claim 8 , wherein the p-n junction is oriented along a longitudinal axis of the carbon nanotube.

12. The carbon nanotube transistor of claim 11 , wherein the orientation of the p-n junction increases an ON/OFF ratio of a drain-source current of the transistor over an ON/OFF ratio of a transistor having an undoped carbon nanotube.

Assignees

• IBM

Inventors

• Cao Qing
• Han Shu-Jen

Classifications

• H10P14/3464

  Nanotubes · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10D62/121

  oriented parallel to substrates · CPC title

• H10D62/119

  Nanowire, nanosheet or nanotube semiconductor bodies · CPC title

• H10D62/118

  Nanostructure semiconductor bodies · CPC title