Nanostructure semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-9287446-B2
Application number	US-201514605551-A
Country	US
Kind code	B2
Filing date	Jan 26, 2015
Priority date	Mar 27, 2014
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.

First claim

What is claimed is:

1. A nanostructure semiconductor light emitting device, comprising:
a base layer formed of a first conductivity-type semiconductor material;
an insulating layer disposed on the base layer and having a plurality of openings;
a plurality of light emitting nanostructures each disposed in an opening of the plurality of openings, each light emitting nanostructure including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on surfaces of the nanocore; and
a contact electrode spaced apart from the insulating layer by a distance greater than approximately 50% of a height of the light emitting nanostructures measured from a surface of the insulating layer and disposed on a portion of the second conductivity-type semiconductor layer,
wherein a tip portion of each respective light emitting nanostructure has crystal planes different from those on side surfaces of the respective light emitting nanostructure.

2. The nanostructure semiconductor light emitting device of claim 1 , wherein the active layer and the second conductivity-type semiconductor layer of each respective light emitting nanostructure cover side surfaces of the nanocore of the respective light emitting nanostructure.

3. The nanostructure semiconductor light emitting device of claim 1 , wherein the light emitting nanostructure has an aspect ratio (height:width) of 2:1 or higher where the width of the light emitting nanostructure is measured along a surface of the insulating layer and a height of the light emitting nanostructure is measured perpendicularly from the surface of the insulating layer.

4. The nanostructure semiconductor light emitting device of claim 1 , wherein the contact electrode is disposed to cover the tip portion of the light emitting nanostructure.

5. The nanostructure semiconductor light emitting device of claim 4 , further comprising a current blocking intermediate layer disposed in at least one of a region between the active layer and the nanocore and a region between the active layer and the second conductivity-type semiconductor layer to suppress a flow of current passing through the active layer in the tip portion of the light emitting nanostructure.

6. The nanostructure semiconductor light emitting device of claim 1 , wherein the contact electrode is not disposed on the tip portion of the light emitting nanostructure and is disposed on the side surfaces of the light emitting nanostructure.

7. The nanostructure semiconductor light emitting device of claim 6 , wherein the contact electrode disposed on the side surfaces of the light emitting nanostructure is extended to a top portion of the side surfaces of the light emitting nanostructure adjacent to the tip portion of the light emitting nanostructure.

8. The nanostructure semiconductor light emitting device of claim 6 , wherein the contact electrode is spaced apart from the tip portion of the light emitting nanostructure by a predetermined distance, and the distance is less than approximately 10% of a height of the light emitting nanostructure.

9. The nanostructure semiconductor light emitting device of claim 6 , wherein the tip portion of the light emitting nanostructure has a non-planarized surface.

10. The nanostructure semiconductor light emitting device of claim 1 , further comprising an insulating protective layer filling a space between the plurality of light emitting nanostructures and contacting lower regions of the plurality of light emitting nanostructures.

11. The nanostructure semiconductor light emitting device of claim 10 , wherein the contact electrode is disposed on the insulating protective layer.

12. The nanostructure semiconductor light emitting device of claim 1 , wherein the crystal planes on the side surfaces of the light emitting nanostructure are perpendicular to an upper surface of the base layer.

13. The nanostructure semiconductor light emitting device of claim 1 , wherein the contact electrode comprises a plurality of contact electrodes spaced apart from one another in a height direction of the light emitting nanostructure.

14. The nanostructure semiconductor light emitting device of claim 13 , wherein the light emitting nanostructure has an aspect ratio (height:width) of 10:1 or higher where the width of the light emitting nanostructure is measured along a surface of the insulating layer and a height of the light emitting nanostructure is measured perpendicularly from the surface of the insulating layer.

15. The nanostructure semiconductor light emitting device of claim 1 , wherein the contact electrode is a thick film that fills a portion of spaces between the light emitting nanostructures.

16. A nanostructure semiconductor light emitting device, comprising:
a base layer formed of a first conductivity-type semiconductor material;
a plurality of light emitting nanostructures disposed on the base layer, each light emitting nanostructure including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore;
a contact electrode spaced apart from the base layer, disposed on a portion of the second conductivity-type semiconductor layers which is higher than half of a height of the light emitting nanostructures, and not disposed on a portion of the second conductivity-type semiconductor layers which is lower than half of a height of the light emitting nanostructures.

17. The nanostructure semiconductor light emitting device of claim 16 , wherein the light emitting nanostructures have planarized upper surfaces.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoo Geon Wook
• Hwang Kyung Wook
• Kim Yong Min
• Sim Sung Hyun

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/8162

  Current-blocking structures · CPC title