Method for producing compound semiconductor, method for manufacturing photoelectric conversion device, and solution for forming semiconductor
US-9023680-B2 · May 5, 2015 · US
Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material
US9287434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9287434-B2 |
| Application number | US-201214129684-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 18, 2012 |
| Priority date | Jun 27, 2011 |
| Publication date | Mar 15, 2016 |
| Grant date | Mar 15, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing a semiconductor layer, the method comprising: forming a lower film containing a metal element; forming an upper film on the lower film, the upper film containing the metal element and a substance that contains oxygen element; generating oxygen gas by heating the upper film; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film, wherein the substance contains an alkali metal element. 2. The method for producing a semiconductor layer according to claim 1 , wherein at least one of the lower film and the upper film contains the chalcogen element. 3. The method for producing a semiconductor layer according to claim 1 , wherein an atmosphere contains the chalcogen element when forming the semiconductor layer. 4. A method for producing a photoelectric conversion device, the method comprising: forming a first semiconductor layer by the method for producing the semiconductor layer according to claim 1 ; and forming a second semiconductor layer having a conductivity type different from the first semiconductor layer, and electrically connected to the first semiconductor layer.
Assignees
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Classifications
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
being Group IIB-VIA materials · CPC title
consisting of two layers · CPC title
being conductive materials · CPC title
- H10P14/3236Primary
being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title
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- What does patent US9287434B2 cover?
- Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the f…
- Who is the assignee on this patent?
- Yamamoto Akio, Oguri Seiji, Ogawa Hiromitsu, and 9 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3236. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).