Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Semiconductor device and method of fabricating same
US9287397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9287397-B2 |
| Application number | US-201313947911-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2013 |
| Priority date | Nov 23, 2012 |
| Publication date | Mar 15, 2016 |
| Grant date | Mar 15, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers, selectively etching the interconnection layer, wherein at least a portion of the interconnection layer that is formed on the surface of the semiconductor substrate and sidewalls of the spacers and located between adjacent gate electrodes remains after the selective etch, and forming an electrical contact on the etched interconnection layer located between the adjacent gate electrodes.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a semiconductor device, comprising: forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate; forming spacers on sidewalls of the gate electrodes; depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers; selectively etching the interconnection layer, wherein at least a portion of the interconnection…
Assignees
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Classifications
- H10W20/0698Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9287397B2 cover?
- A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and th…
- Who is the assignee on this patent?
- Semiconductor Mfg Int Corp, Semiconductor Mfg Int Shanghai
- What technology area does this patent fall under?
- Primary CPC classification H10W20/0698. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).