Method for producing a high-temperature and temperature-change resistant connection between a semiconductor module and a connection partner

Patent metadata

Field	Value
Publication number	US-9287232-B2
Application number	US-201013148848-A
Country	US
Kind code	B2
Filing date	Feb 4, 2010
Priority date	Feb 13, 2009
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

The invention relates to a method for producing a connection between a semiconductor component and semiconductor component and semiconductor module resistant to high temperatures and temperature changes by means of a temperature impinging process, wherein a metal powder suspension is applied to the areas of the semiconductor module to be connected later; the suspension layer is dried, outgassing the volatile components and generating a porous layer; the porous layer is pre-sealed without complete sintering taking place throughout the suspension layer; and, in order to obtain a solid electrically and thermally conductive connection of a semiconductor module to a connection partner from the group of: substrate, further semiconductor or interconnect device, the connection is a sintered connection generated without compression by increasing the temperature and made of a dried metal powder suspension that has undergone a first transport-safe contact with the connection partner in a pre-compression step and has been solidified at zero pressure using temperature sintering.

First claim

What is claimed is:

1. A method for producing a high-temperature and temperature-change resistant connection between a semiconductor module, a connection partner and a contact tab, by means of a temperature impinging process, in which:
a first side and a second side of the semiconductor module to be connected to the connection partner are coated with a metal powder suspension;
the suspension coating applied to the semiconductor module is dried with a degassing of volatile components generating a porous layer, and is precompressed prior to applying the semiconductor module to the connection partner;
a first transportable component is formed by fixing the semiconductor module to the connection partner on one of the first or second sides of the semiconductor module by pressing the connection partner to penetrate into the dried suspension coating prior to a complete sintering penetrating through the whole suspension coating;
a contact tab is introduced to the first or second side of the semiconductor module opposite the connection partner with low pressure; and
the semiconductor module is thermally and electrically connected to the connection partner and to the contact tab through temperature sintering without application of pressure.

2. The method of claim 1 wherein in order to improve the sintering quality, an atmosphere, during sintering, is enriched with an inert or reactive gas.

3. The method of claim 2 , wherein the gas comprises principally nitrogen.

4. The method of claim 3 , wherein the gas is forming gas.

5. The method of claim 1 , wherein the connection partner is a substrate.

6. The method of claim 1 , wherein the connection partner is a semiconductor.

7. The method of claim 1 , wherein the connection partner is a circuit board.

8. A method for producing a high-temperature and temperature-change resistant connection between a component, a connection partner and a contact tab, the method comprising:
coating a first side and a second side of the component with a metal powder suspension;
drying the metal suspension coating applied to the component with a degassing of volatile components generating a porous layer;
precompressing the dried metal suspension coating;
forming a first transportable component by fixing the component to the connection partner on one of the first or second sides of the component by pressing the connection partner to penetrate into the dried metal suspension coating prior to a complete sintering penetrating through the whole suspension coating;
introducing a contact tab to the first or second side of the component opposite the connection partner with low pressure; and
thermally and electrically connecting the component to the connection partner and to the contact tab through temperature sintering without application of pressure.

9. The method of claim 8 , wherein the component is a semiconductor.

10. The method of claim 8 , wherein in order to improve the sintering quality, an atmosphere, during sintering, is enriched with an inert or reactive gas.

11. The method of claim 10 , wherein the gas comprises principally nitrogen.

12. The method of claim 11 , wherein the gas is forming gas.

13. The method of claim 8 , wherein the connection partner is a substrate.

14. The method of claim 8 , wherein the connection partner is a semiconductor.

15. The method of claim 8 , wherein the connection partner is a circuit board.

Assignees

• Kock Mathias
• Eisele Ronald
• Danfoss Silicon Power Gmbh

Inventors

• Kock Mathias
• Eisele Ronald

Classifications

• H10W90/732

  between stacked chips · CPC title

• H10W72/07631

  Techniques · CPC title

• H10W72/07341

  Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/07333

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title