Semiconductor device comprising an oxide semiconductor

Patent metadata

Field	Value
Publication number	US-9287117-B2
Application number	US-201314054078-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Oct 17, 2012
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a base insulating layer;
a first oxide layer over the base insulating layer;
an oxide semiconductor layer over the first oxide layer;
a second oxide layer over the oxide semiconductor layer;
a first source electrode layer and a first drain electrode layer each of which is in contact with a top surface of the second oxide layer;
a second source electrode layer and a second drain electrode layer over the first source electrode layer and the first drain electrode layer, respectively, and in contact with the top surface of the second oxide layer;
a gate insulating layer over the second source electrode layer and the second drain electrode layer, and in contact with the top surface of the second oxide layer between the second source electrode layer and the second drain electrode layer; and
a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween,
wherein the base insulating layer and the gate insulating layer are in contact with each other.

2. The semiconductor device according to claim 1 ,
wherein the gate electrode layer overlaps with the first source electrode layer and the first drain electrode layer.

3. The semiconductor device according to claim 1 ,
wherein the gate electrode layer does not overlap with the first source electrode layer and the first drain electrode layer.

4. The semiconductor device according to claim 1 ,
wherein the gate electrode layer overlaps with the second source electrode layer and the second drain electrode layer.

5. The semiconductor device according to claim 1 ,
wherein the second source electrode layer and the second drain electrode layer cover the first source electrode layer and the first drain electrode layer, respectively.

6. The semiconductor device according to claim 1 ,
The first source electrode layer and the first drain electrode layer are in contact with side surfaces of the first oxide layer, the oxide semiconductor layer, and the second oxide layer.

7. The semiconductor device according to claim 1 ,
wherein the gate electrode layer has a stacked-layer structure.

8. The semiconductor device according to claim 1 ,
wherein the base insulating layer and the gate insulating layer contains oxygen, and
wherein the second source electrode layer and the second drain electrode layer contains nitrogen.

9. The semiconductor device according to claim 8 ,
wherein each of the second source electrode layer and the second drain electrode layer is a metal nitride film.

10. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor layer includes a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface of the oxide semiconductor layer.

11. A semiconductor device comprising:
a base insulating layer;
a first oxide layer over the base insulating layer;
an oxide semiconductor layer over the first oxide layer;
a first source electrode layer and a first drain electrode layer each of which is in contact with a top surface of the oxide semiconductor layer;
a second oxide layer over the first source electrode layer and the first drain electrode layer;
a second source electrode layer and a second drain electrode layer over the second oxide layer;
a gate insulating layer over the second source electrode layer and the second drain electrode layer, and in contact with a top surface of the second oxide layer between the second source electrode layer and the second drain electrode layer; and
a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween,
wherein the base insulating layer and the gate insulating layer are in contact with each other.

12. The semiconductor device according to claim 11 ,
wherein the gate electrode layer overlaps with the first source electrode layer and the first drain electrode layer.

13. The semiconductor device according to claim 11 ,
wherein the gate electrode layer does not overlap with the first source electrode layer and the first drain electrode layer.

14. The semiconductor device according to claim 11 ,
wherein the gate electrode layer overlaps with the second source electrode layer and the second drain electrode layer.

15. The semiconductor device according to claim 11 ,
wherein the first source electrode layer and the first drain electrode layer are in contact with side surfaces of the first oxide layer and the oxide semiconductor layer.

16. The semiconductor device according to claim 11 ,
wherein the gate electrode layer has a stacked-layer structure.

17. The semiconductor device according to claim 11 ,
wherein the base insulating layer and the gate insulating layer contains oxygen, and
wherein the second source electrode layer and the second drain electrode layer contains nitrogen.

18. The semiconductor device according to claim 17 ,
wherein each of the second source electrode layer and the second drain electrode layer is a metal nitride film.

19. The semiconductor device according to claims 11 ,
wherein the oxide semiconductor layer includes a crystal part, and
wherein a c-axis of the crystal part is parallel to a normal vector of a surface of the oxide semiconductor layer.

20. The semiconductor device according to claim 11 , the semiconductor device further comprising a third source electrode layer and a third drain electrode layer,
wherein the third source electrode layer is in contact with the first source electrode layer through a first contact hole provided in the second oxide layer, the second source electrode layer, and the gate insulating layer, and
wherein the third drain electrode layer is in contact with the first drain electrode layer through a second contact hole provided in the second oxide layer, the second drain electrode layer, and the gate insulating layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Suzawa Hideomi
• Sasagawa Shinya
• Tanaka Tetsuhiro

Classifications

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title