Optoelectronic semiconductor chip
US-2024204138-A1 · Jun 20, 2024 · US
US9285506B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9285506-B2 |
| Application number | US-201313913794-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2013 |
| Priority date | Jun 12, 2012 |
| Publication date | Mar 15, 2016 |
| Grant date | Mar 15, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An ITO film having a band gap in a range of 4.0 eV to 4.5 eV.
Opening claim text (preview).
What is claimed is: 1. An ITO film having a band gap in a range of 4.0 eV to 4.5 eV, wherein the ITO film has an L*a*b* color tone in which L* is from 99.5 to 99.7, a* is from −0.35 to −0.17, and b* is from −0.24 to −0.06. 2. The ITO film according to claim 1 , wherein the film is formed from an ITO powder having a perse color tone.
Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title
Optical elements characterised by the material of which they are made; Optical coatings for optical elements · CPC title
Compounds of tin · CPC title
Electricity · mapped topic
Oxides · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.