Test structure and methodology for estimating sensitivity of pressure sensors

US9285404B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9285404-B2
Application numberUS-201313967877-A
CountryUS
Kind codeB2
Filing dateAug 15, 2013
Priority dateAug 15, 2013
Publication dateMar 15, 2016
Grant dateMar 15, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A test structure includes two capacitor structures, wherein one of the capacitor structures has conductor plates spaced apart by a cavity, and the other capacitor structure does not include a cavity. Methodology entails forming the test structure and a pressure sensor on the same substrate using the same fabrication process techniques. Methodology for estimating the sensitivity of the pressure sensor includes detecting capacitances for each of the two capacitor structures and determining a ratio of the capacitances. A critical dimension of the cavity in one of the capacitor structures is estimated using the ratio, and the sensitivity of the pressure sensor is estimated using the critical dimension.

First claim

Opening claim text (preview).

What is claimed is: 1. A test structure comprising: a first capacitor structure having a first conductor plate, a second conductor plate, and an electrical insulator layer interposed between and in contact with each of said first and said second conductor plates, said first capacitor structure producing a first capacitance; and a second capacitor structure having a third conductor plate and a fourth conductor plate spaced apart by a cavity, said second capacitor structure producing a second capacitance, wherein a ratio of said second capacitance to said first capacitance is utilized to estimate a critical dimension of said cavity, wherein said first and second capacitor structures are formed on a substrate upon which a pressure sensor is formed, said pressure sensor includes a sense cell having a sense cavity, said sense cavity is characterized by a width, said critical dimension is proportional to said width of said sense cavity, and said critical dimension is utilized to estimate a sensitivity of said pressure sensor. 2. A test structure as claimed in claim 1 wherein said ratio is proportional to said critical dimension. 3. A test structure as claimed in claim 1 wherein said first capacitor structure does not include a cavity. 4. A test structure as claimed in claim 1 further comprising a cap layer over said fourth conductor plate of said second capacitor structure. 5. A test structure as claimed in claim 1 wherein said first and second capacitor structures are formed on said substrate such that said first conductor plate is interposed between said substrate and said electrical insulator layer, and said third conductor plate is interposed between said substrate and said cavity. 6. A test structure as claimed in claim 1 wherein said pressure sensor includes a sense cell having a first electrode and a second electrode, said first electrode being formed in a first structural layer, said second electrode being formed in a second structural layer, and: said first and third conductor plates are formed in said first structural layer; and said second and fourth conductor plates are formed in said second structural layer. 7. A test structure as claimed in claim 1 wherein said substrate includes a single pressure sensor and said first and second capacitor structures are formed on said substrate in association with said single pressure sensor. 8. A test structure as claimed in claim 1 wherein said substrate includes a plurality of pressure sensors, said pressure sensor being one of said plurality of pressure sensors, and said test structure is a single test structure in association with said plurality of pressure sensors. 9. A test structure as claimed in claim 1 wherein said substrate includes a plurality of pressure sensors laterally separated from one another by inactive regions, and said test structure is formed on said substrate in one of said inactive regions. 10. A method comprising: forming a plurality of pressure sensors on a substrate, each of said pressure sensors including a sense cell having a first cavity; and forming only one test structure on said substrate, said test structure including a first capacitor structure and a second capacitor structure, said first capacitor structure having a first conductor plate, a second conductor plate, and an electrical insulator layer interposed between and in contact with each of said first and said second conductor plates, said first capacitor structure being formed without a cavity, and said second capacitor structure having a third conductor plate and a fourth conductor plate spaced apart by a second cavity. 11. A method as claimed in claim 10 wherein: a sense electrode of said each of said pressure sensors, said first conductor plate of said first capacitor structure, and said third conductor plate of said second capacitor structure are formed in a first structural layer; and a diaphragm of said each of said pressure sensors, said second conductor plate of said first capacitor structure, and said fourth conductor plate of said second capacitor structure are formed in a second structural layer. 12. A method as claimed in claim 10 wherein said forming said test structure includes forming a cap layer over said fourth conductor plate of said second capacitor structure, said cap layer making said second capacitor structure insensitive to pressure. 13. A method comprising: forming a plurality of pressure sensors on a substrate, each of said pressure sensors including a sense cell having a first cavity; forming a plurality of test structures on said substrate, each of said test structures including a first capacitor structure and a second capacitor structure, said first capacitor structure having a first conductor plate, a second conductor plate, and an electrical insulator layer interposed between and in contact with each of said first and said second conductor plates, said first capacitor structure being formed without a cavity, and said second capacitor structure having a third conductor plate and a fourth conductor plate spaced apart by a second cavity; and separating said substrate into a plurality of dies, each of said dies including one of said pressure sensors and one of said test structures. 14. A method comprising: forming a plurality of pressure sensors on a substrate laterally separated from one another by inactive regions, each of said pressure sensors including a sense cell having a first cavity; and forming a test structure on said substrate, said test structure including a first capacitor structure and a second capacitor structure, said first capacitor structure having a first conductor plate, a second conductor plate, and an electrical insulator layer interposed between and in contact with each of said first and said second conductor plates, said first capacitor structure being formed without a cavity, and said second capacitor structure having a third conductor plate and a fourth conductor plate spaced apart by a second cavity, wherein said forming said test structure includes forming said test structure on said substrate in one of said inactive regions.

Assignees

Inventors

Classifications

  • Calibrating, i.e. establishing true relation between transducer output value and value to be measured, zeroing, linearising or span error determination · CPC title

  • Apparatus for calibrating pressure sensors · CPC title

  • Measuring capacitance (capacitive sensors G01D5/24) · CPC title

  • G01L9/0072Primary

    using variations in capacitance · CPC title

  • Pressure sensors · CPC title

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What does patent US9285404B2 cover?
A test structure includes two capacitor structures, wherein one of the capacitor structures has conductor plates spaced apart by a cavity, and the other capacitor structure does not include a cavity. Methodology entails forming the test structure and a pressure sensor on the same substrate using the same fabrication process techniques. Methodology for estimating the sensitivity of the pressure …
Who is the assignee on this patent?
Freescale Semiconductor Inc
What technology area does this patent fall under?
Primary CPC classification G01R27/2605. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).