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Sloped structure, method for manufacturing sloped structure, and spectrum sensor
US9285271B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9285271-B2 |
| Application number | US-201414313122-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2014 |
| Priority date | Aug 19, 2011 |
| Publication date | Mar 15, 2016 |
| Grant date | Mar 15, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A sloped structure comprising: a first portion connected to a first surface of a substrate; a second portion sloped with respect to the first surface of the substrate; and a third portion connecting the first portion and the second portion together, and having a thin region thinner than the first portion or the second portion, wherein an end portion of the second portion is adhered to the substrate, the end portion being at an end of the second portion…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9285271B2 cover?
- A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a t…
- Who is the assignee on this patent?
- Seiko Epson Corp
- What technology area does this patent fall under?
- Primary CPC classification G01J3/0256. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).