Inorganic nanocoating primed organic film
US-9040120-B2 · May 26, 2015 · US
US9284104B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9284104-B2 |
| Application number | US-201313923899-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2013 |
| Priority date | Jun 23, 2012 |
| Publication date | Mar 15, 2016 |
| Grant date | Mar 15, 2016 |
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An apparatus and method for depositing an ultra-thin inorganic coating on to a packaging film substrate is disclosed. Flame pretreatment enhances the quality of the inorganic coating. Multiple coating layers may be deposited onto the substrate by passing the substrate over various one or more flame head configurations in either a stand-alone or in-line manufacturing environment.
Opening claim text (preview).
We claim: 1. A method of coating a film substrate with at least one inorganic oxide layers comprising: pretreating said substrate by passing said substrate through at least one flame treatment flame head assembly supplied with no inorganic oxide precursor; after said pretreating step, depositing two or more inorganic oxide layers on said substrate by passing said substrate through two or more deposition flame heads on at least one deposition flame head assembly supplied with at least one inorganic oxide precursor, wherein said pretreating and depositing steps occur at open atmosphere; said depositing step is performed at a flame temperature that ranges from 650° C. to 1450° C.; said pretreatment step substantially enhances an atomic percentage of inorganic oxide in said inorganic oxide layers during said deposition step such that WVTR of said inorganic layers is <0.2 g/m 2 /day; and OTR of said inorganic layers is <20 cc/m 2 /day. 2. The method of claim 1 wherein said at least one inorganic oxide precursor comprises at least one of tetraethyl orthosilicate, tetramethyl disiloxane, silicon tetrachloride, silane, trimethylaluminium, triethylaluminium, methylaluminiumdichlorid-diethyletherate, trimethylaluminium-diethyletherate, ethylaluminiumdichlorid-diethyletherate, diethylaluminium-dimethylamide, aluminum trichloride, and aluminum halides. 3. The method of claim 1 wherein said pretreating step comprising passing said substrate over a portion of at least one chill roll. 4. The method of claim 1 wherein said pretreating step comprises passing said substrate over a portion of multiple chill rolls. 5. The method of claim 3 wherein said chill roll comprises a temperature of 40° C. to 80° C. 6. The method of claim 1 wherein said pretreating and depositing steps occur as said film substrate is unwound from one roll and wound onto a second roll. 7. The method of claim 1 wherein said pretreating and depositing steps occur in-line during manufacturing of said film substrate. 8. The method of claim 1 wherein said film substrate is cooled during said pretreating step by spraying cooling fluid on said film substrate.
After-treatment · CPC title
for coating elongated substrates · CPC title
Cooling of the substrate · CPC title
using plasma jets · CPC title
containing silicon · CPC title
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