Power module and three-level power converter using the same

Patent metadata

Field	Value
Publication number	US-9281760-B2
Application number	US-201214396640-A
Country	US
Kind code	B2
Filing date	Apr 26, 2012
Priority date	Apr 26, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A first pair including a highest-outer-side switching element and a switching element that operates as a neutral clamp diode on a higher potential side, a second pair including a lowest-outer-side switching element and a switching element that operates as a neutral clamp diode on a lower potential side, and a third pair including a higher-inner-side switching element and a lower-inner-side switching element are respectively configured from power modules that are two-element-inclusive power modules, a power conversion circuit portion being configured from the first pair, the second pair, and the third pair.

First claim

The invention claimed is:

1. A three-level power converter, comprising a first pair including an outer-side switching element on a highest potential side and a neutral clamp diode on a higher potential side, a second pair including an outer-side switching element on a lowest potential side and a neutral clamp diode on a lower potential side, and a third pair including an inner-side switching element on a higher potential side and an inner-side switching element on a lower potential side, wherein
all of the first pair, the second pair and the third pair are each configured from a two-element-inclusive power module having at least one pair of a diode and switching element, in each of which the diode and the switching element are connected in anti-parallel with each other, a power conversion circuit portion is configured from the first pair, the second pair, and the third pair,
a first switching state is such that the outer-side switching element on the highest potential side and the inner-side switching element on the higher potential side are on and the inner-side switching element on the lower potential side and the outer-side switching element on the lowest potential side are off,
a second switching state is such that the inner-side switching element on the higher potential side and the inner-side switching element on the lower potential side are on and the outer-side switching element on the highest potential side and the outer-side switching element on the lowest potential side are off,
a third switching state is such that the inner-side switching element on the lower potential side and the outer-side switching element on the lowest potential side are on and the outer-side switching element on the highest potential side and the inner-side switching element on the higher potential side are off,
switching is performed between the first switching state and the second switching state or between the second switching state and the third switching state,
the switching element in the two-element-inclusive power module is formed of a wide bandgap semiconductor, and
each of the first pair, the second pair and the third pair are housed in a separate package.

2. The three-level power converter according to claim 1 , wherein
the two-element-inclusive power module from which the first to third pairs are configured is a two-element-inclusive four-terminal power module from which a higher potential electrode and a lower potential electrode of one element pair and a higher potential electrode and a lower potential electrode of another element pair are each led out.

3. The three-level power converter according to claim 1 , wherein
the two-element-inclusive power module from which the first to third pairs are configured is a two-element-inclusive three-terminal power module from which a higher potential electrode of one element pair, a lower potential electrode of another element pair, and a connection end of a lower potential electrode of the one element pair and the higher potential electrode of the another element pair are each led out.

4. The three-level power converter according to claim 1 , wherein
switching is performed between the first switching state and the second switching state via a fourth switching state in which the inner-side switching element on the higher potential side is on and the outer-side switching element on the highest potential side, the inner-side switching element on the lower potential side, and the outer-side switching element on the lowest potential side are off, and
switching is performed between the second switching state and the third switching state via a fifth switching state in which the inner-side switching element on the lower potential side is on and the outer-side switching element on the highest potential side, the inner-side switching element on the higher potential side, and the outer-side switching element on the lowest potential side are off.

5. The three-level power converter according to claim 4 , wherein the wide bandgap semiconductor is a semiconductor using silicon carbide, gallium nitride material, or diamond.

Assignees

• Kobayashi Tomohiro
• Nakashima Yukio
• Okayama Hideo
• Mitsubishi Electric Corp

Inventors

• Kobayashi Tomohiro
• Nakashima Yukio
• Okayama Hideo

Classifications

• H02M7/537 Primary

  using semiconductor devices only, e.g. single switched pulse inverters · CPC title

• H02M7/487 Primary

  Neutral point clamped inverters · CPC title

• H02M5/271

  from a three phase input voltage · CPC title

• H02M7/003

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H02M3/157

  with digital control · CPC title