Method of Forming Semiconductor Device
US-2024379727-A1 · Nov 14, 2024 · US
Light-receiving device
US9281485B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9281485-B2 |
| Application number | US-201314407574-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2013 |
| Priority date | Jun 14, 2012 |
| Publication date | Mar 8, 2016 |
| Grant date | Mar 8, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
For simplification of a structure and a manufacturing process of an element, and reduction of manufacturing cost, the present disclosure provides a light-receiving device including: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configured to amplify a detection signal based on the photoelectric conversion element, or a selection element configured to selectively output the detection signal based on the photoelectric conversion element, and the photoelectric conversion element and at least part of the active element are formed by using an identical organic semiconductor material or an identical high molecular functional material.
First claim
Opening claim text (preview).
The invention claimed is: 1. A light-receiving device, comprising: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configured to amplify a detection signal based on the photoelectric conversion element, or a selection element configured to selectively output the detection signal based on the photoelectric conversion element, and the photoelectric conversion element and at least part of the active element are formed by using an identical organic semiconductor material or an identical high molecular functional material; wherein the photoelectric conversion element is a phototransistor constituted of a pnp-type or npn-type layered organic semiconductor bipolar transistor. 2. The light-receiving device of claim 1 , wherein the photoelectric conversion element and the active element are formed by using at least one of an identical electrode material or an identical insulating material. 3. The light-receiving device of claim 1 , wherein a base layer of the phototransistor has a thickness of 10 nm or larger and 40 nm or smaller. 4. The light-receiving device of claim 1 , wherein the photoelectric conversion element and the active element are formed on a glass substrate. 5. The light-receiving device of claim 1 , wherein the photoelectric conversion element and the active element are formed on a film substrate.
Assignees
Inventors
Classifications
Constructional details · CPC title
- H10F39/8053Primary
Colour filters · CPC title
Wafer-level processing · CPC title
Bipolar transistor image sensors · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9281485B2 cover?
- For simplification of a structure and a manufacturing process of an element, and reduction of manufacturing cost, the present disclosure provides a light-receiving device including: a photoelectric conversion element; and an active element, wherein the active element includes at least one of a reset element configured to reset the photoelectric conversion element, an amplifier element configure…
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8053. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).