Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Patent metadata

Field	Value
Publication number	US-9281394-B2
Application number	US-201414329751-A
Country	US
Kind code	B2
Filing date	Jul 11, 2014
Priority date	Feb 2, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.

First claim

What is claimed is:

1. A semiconductor power device, comprising:
a lightly doped layer of a first conductivity type formed on top of a heavily doped layer of the first conductivity type,
one or more devices formed in the lightly doped layer, each device including a doped body region of a second conductivity type that is opposite the first conductivity type,
one or more electrically insulated gate electrodes formed in one or more corresponding trenches in the lightly doped layer, and a source region, wherein each of the one or more trenches has a depth that extends in a first dimension, a width that extends in a second dimension and a length that extends in a third dimension, wherein the first dimension is perpendicular to a plane of the heavily doped layer and wherein the second and third dimensions are parallel to the plane of the heavily doped layer;
wherein the doped body region is formed adjacent to one or more of the trenches proximate an upper surface of the lightly doped layer;
wherein the source region is formed proximate the upper surface and adjacent to one or more of the trenches extending along the third dimension;
one or more deep heavily doped contacts of the second conductivity type formed at one or more locations proximate one or more of the trenches along the third dimension, wherein the one or more deep heavily doped contacts extend in the first direction from a surface below a top surface of the gate electrodes into a portion of the lightly doped layer substantially a same depth as a bottom of the doped body region, wherein the one or more deep heavily doped contacts are in electrical contact with the source region;
one or more doped implant shield regions formed in the lightly doped layer adjacent a bottom portion of one or more of the trenches extending along the third dimension,
wherein the one or more doped implant shield regions are of the second conductivity type, wherein one or more of the deep heavily doped contacts electrically connect one or more of the doped implant shield regions; and
a gate contact trench and a doped implant shield region of second conductivity type formed in the lightly doped layer adjacent a bottom portion of the gate contact trench extending along the third dimension.

2. The device of claim 1 , wherein the one or more deep heavily doped contacts extend in the first direction into a portion of the lightly doped layer above a bottom of the one or more trenches.

3. The device of claim 1 , wherein the source region comprises a first heavily doped region of the first conductivity type formed proximate the upper surface extending from a side wall of a first trench of the one or more trenches to a side wall of a second trench of the one or more trenches adjacent the first trench and a second heavily doped region of the first conductivity type adjacent to the side wall of the first trench.

4. The device of claim 3 , wherein the source region further comprises a lightly dope region of the first conductivity type disposed below and intersecting with the second heavily doped region of the first conductivity type adjacent to the side wall of the first trench extending along the first dimension.

5. The device of claim 3 further comprises a heavily doped region of the second conductivity type disposed below and intersecting with the first heavily doped region of the first conductivity type.

6. The device of claim 1 , wherein the one or more deep heavily doped contacts include one or more deep heavily doped contact regions formed on top of one or more deep implant regions of the second conductivity type, wherein the one or more deep implant regions intersect the doped implant shield region.

7. The device of claim 1 , further comprising a termination area having one or more isolated gate disposed in one or more corresponding trenches isolated from each other and doped implant shield regions formed in the lightly doped layer adjacent a bottom portion of one or more of the isolated trenches extending along the third dimension.

8. The device of claim 1 , wherein one or more openings through the source region atop the one or more deep heavily doped contacts extending in the second dimension from a side wall of one of the one or more trenches to a side wall of an adjacent trench, said openings being filled with a conductive material.

9. The device of claim 1 , wherein a thick bottom insulator is formed in a bottom portion of one or more of the trenches between the gate electrode and the lightly doped layer.

10. The device of claim 1 , further comprising one or more shield electrodes formed in one or more of the one or more trenches proximate a corresponding one or more of the one or more gate electrodes, wherein the one or more shield electrodes are electrically coupled to the source region.

11. The device of claim 1 , wherein the top surface of the gate electrode extends above the upper surface of the lightly doped layer, the source region comprising a Schottky metal layer disposed atop of a lightly doped layer of the second conductivity type proximate the upper surface of the lightly doped layer constituting a Schottky source.

12. The device of claim 11 , further comprising a conductive material filling a space above the Schottky metal layer between adjacent trenches.

13. A semiconductor power device, comprising:
a lightly doped layer of a first conductivity type formed on top of a heavily doped layer of the first conductivity type,
one or more devices formed in the lightly doped layer, each device including a doped body region of a second conductivity type that is opposite the first conductivity type,
one or more electrically insulated gate electrodes formed in one or more corresponding trenches in the lightly doped layer, and a source region, wherein the source region comprises a heavily doped region of the first conductivity type formed proximate the upper surface extending from a side wall of a first trench of the one or more trenches to a side wall of a second trench of the one or more trenches adjacent the first trench, an elongated opening along the third dimension formed through a central portion of the source region exposed a portion of the doped body region in the opening,
wherein each of the one or more trenches has a depth that extends in a first dimension, a width that extends in a second dimension and a length that extends in a third dimension, wherein the first dimension is perpendicular to a plane of the heavily doped layer and wherein the second and third dimensions are parallel to the plane of the heavily doped layer;
wherein the doped body region is formed adjacent to one or more of the trenches proximate an upper surface of the lightly doped layer;
wherein the source region is formed proximate the upper surface and adjacent to one or more of the trenches extending along the third dimension;
one or more deep heavily doped contacts of the second conductivity type formed at one or more locations proximate one or more of the trenches along the third dimension, wherein the one or more deep heavily doped contacts extend in the first direction from a surface below a top surface of the gate electrodes into a portion of the lightly doped layer substantially a same depth as a bottom of the doped body region, wherein the one or more deep heavily doped contacts are in electrical contact with the source region; and
one or more dummy gate trenches adjacent to one of the one or more trenches, a source metal electrically connecting a heavily doped region of the second conductivity type disposed under a heavily dope region of the first conductivity type proximate the upper surface on a mesa formed between the dummy gat

Assignees

• Alpha & Omega Semiconductor

Inventors

• Yilmaz Hamza
• Ng Daniel
• Calafut Daniel
• Bobde Madhur
• Bhalla Anup
• Pan Ji
• Lee Yeeheng
• Kim Jongoh

Classifications

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10D64/516

  the thicknesses being non-uniform · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• H10D62/155

  Shapes  (cell layout of DMOS H10D62/127) · CPC title