Semiconducting graphene composition, and electrical device including the same

Patent metadata

Field	Value
Publication number	US-9281385-B2
Application number	US-201113164532-A
Country	US
Kind code	B2
Filing date	Jun 20, 2011
Priority date	Jun 18, 2010
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.

First claim

What is claimed is:

1. A graphene composition comprising:
a planar-shaped molecular structure consisting of a graphene monolayer; and
an alkali metal disposed on the graphene monolayer,
wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.

2. The graphene composition of claim 1 , wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.

3. The graphene composition of claim 1 , wherein the alkali metal is sodium.

4. The graphene composition of claim 1 , wherein the alkali metal is disposed on at least one surface of the graphene monolayer.

5. The graphene composition of claim 1 , wherein the alkali metal has a 2-dimensional thin film structure.

6. The graphene composition of claim 1 , wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.

7. The graphene composition of claim 1 , wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.

8. The graphene composition of claim 1 , wherein the alkali metal occupies about 50 to about 90 percent of an entire surface of the graphene monolayer.

9. The graphene composition of claim 1 , wherein the composition has a band gap of about 0.4 electron volt or more.

10. The graphene composition of claim 1 , wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.

11. The graphene composition of claim 1 , wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.

12. The graphene composition of claim 1 , wherein the graphene monolayer has an area of 1 square centimeter or more.

13. The graphene composition of claim 1 , wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.

14. The graphene composition of claim 1 , wherein a purity of the graphene monolayer is about 99 percent or more.

15. The graphene composition of claim 1 , wherein a substrate is further disposed under the graphene monolayer.

16. The graphene composition of claim 15 , wherein the substrate comprises at least one selected from the group consisting of a plastic, silicon, a glass, a GaN, a silica, nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, manganese, molybdenum, rhodium, iridium, tantalum substrate, titanium, tungsten, uranium; vanadium, and zirconium.

17. An electrical device comprising the graphene composition of claim 1 .

18. The electrical device of claim 17 , wherein the electrical device is at least one selected from the group consisting of a sensor, a bipolar junction transistor, a field effect transistor, a heterojunction bipolar transistor, a single electron transistor, a light emitting diode, and an organic electroluminescent diode.

Assignees

• Shin Hyeon-Jin
• Choi Jae-Young
• Ahn Joung-Real
• Jeon Cheol-Ho
• Samsung Electronics Co Ltd

Inventors

• Shin Hyeon-Jin
• Choi Jae-Young
• Ahn Joung-Real
• Jeon Cheol-Ho

Classifications

• H10D64/01356 Primary

  the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence) · CPC title

• H10D30/6741

  Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755) · CPC title

• H10D30/47 Primary

  having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] · CPC title

• H10D30/402

  Single electron transistors; Coulomb blockade transistors · CPC title

• H10D10/311

  Thin-film BJTs · CPC title