Fabrication method of silicon carbide semiconductor apparatus

Patent metadata

Field	Value
Publication number	US-9281194-B2
Application number	US-201314390715-A
Country	US
Kind code	B2
Filing date	Mar 18, 2013
Priority date	Apr 6, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

An ohmic electrode ( 6 ) of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate ( 1 ) by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing the magnetic permeability of nickel and producing a carbide, where compositional ratios of the mixture or alloy are adjusted to predetermined compositional ratios, and by executing heat treatment for the ohmic metal film to calcinate the ohmic metal film. Thus, the ohmic electrode ( 6 ) that is for the silicon carbide semiconductor apparatus and capable of improving the use efficiency of the target can be manufactured, whose film thickness is even and that does not peel off.

First claim

The invention claimed is:

1. A silicon carbide semiconductor apparatus fabrication method comprising:
forming an ohmic metal film on a silicon carbide substrate by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing magnetic permeability of nickel and producing a carbide, compositional ratios of the mixture or the alloy being adjusted to predetermined compositional ratios; and
executing heat treatment for the ohmic metal film to calcinate the ohmic metal film, wherein
the metal(s) reducing the magnetic permeability of the nickel and producing the carbide is titanium, and
a ratio of titanium in the target is 8 at % or greater and 50 at % or less.

2. The silicon carbide semiconductor apparatus fabrication method according to claim 1 , wherein
a temperature at which the heat treatment is executed is 1,050 degrees C. or greater.

3. A silicon carbide semiconductor apparatus fabrication method comprising:
growing an epitaxial layer on a first principal surface of a silicon carbide substrate;
forming an ohmic metal film on the silicon carbide substrate by sputtering a target comprising a mixture or an alloy having therein nickel and a metal(s) reducing magnetic permeability of nickel and producing a carbide, compositional ratios of the mixture or alloy being adjusted to predetermined compositional ratios, onto a second principal surface of the silicon carbide substrate; and
executing a heat treatment for the ohmic metal film to calcinate the ohmic metal film.

4. The silicon carbide semiconductor apparatus fabrication method according claim 3 , wherein
the metal(s) reducing the magnetic permeability of the nickel and producing the carbide is/are one, or two or more metal(s) selected from among molybdenum, tungsten, tantalum, vanadium, zirconium, titanium, chromium, and aluminum.

5. The silicon carbide semiconductor apparatus fabrication method according to claim 3 , wherein
the metal(s) reducing the magnetic permeability of the nickel and producing the carbide is/are titanium, and
a ratio of titanium in the target is 8 at % or greater and 50 at % or less.

6. The silicon carbide semiconductor apparatus fabrication method according to claim 3 , wherein
a temperature at which the heat treatment is executed is 1,050 degrees C. or greater.

7. A silicon carbide semiconductor apparatus fabrication method comprising:
forming an ohmic metal film on a silicon carbide substrate by sputtering a target including a mixture or an alloy having therein nickel, and a metal(s) reducing magnetic permeability of nickel and producing a carbide, compositional ratios of the mixture or the alloy being adjusted to predetermined compositional ratios; and
executing heat treatment for the ohmic metal film to calcinate the ohmic metal film, wherein
the metal(s) reducing the magnetic permeability of the nickel and producing the carbide is/are one, or two or more metal(s) selected from among molybdenum, tungsten, tantalum, vanadium, zirconium, titanium, chromium, and aluminum, and
a ratio of said one, or two or more selected metal(s) in the target is 8 at % or greater and 50 at % or less.

Assignees

• Fuji Electric Co Ltd

Inventors

• Ryo Mina
• Nakamata Shinichi
• Kinoshita Akimasa
• Fukuda Kenji

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10P14/42

  using a gas or vapour · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10D64/0115 Primary

  to silicon carbide · CPC title