Methods of fabricating semiconductor devices

US9281179B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9281179-B2
Application numberUS-201113303317-A
CountryUS
Kind codeB2
Filing dateNov 23, 2011
Priority dateDec 23, 2010
Publication dateMar 8, 2016
Grant dateMar 8, 2016

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  5. First independent claim

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Abstract

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Provided is a method of fabricating a semiconductor device. The method includes: preparing a substrate with an etching target, and etching the etching target through a plasma-free etching process that uses an etching gas including one of interhalogen compound, F 2 , XeF 2 and combinations thereof.

First claim

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What is claimed is: 1. A method of fabricating a semiconductor device, the method comprising: preparing a substrate with an etching target; and etching the etching target using a plasma-free etching process that uses an etching gas including one of an interhalogen compound, F 2 , XeF 2 , or combinations thereof, and performing a hydrogen replacement process on the substrate after the plasma-free etching process is performed, wherein the hydrogen replacement process includes p…

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What does patent US9281179B2 cover?
Provided is a method of fabricating a semiconductor device. The method includes: preparing a substrate with an etching target, and etching the etching target through a plasma-free etching process that uses an etching gas including one of interhalogen compound, F 2 , XeF 2 and combinations thereof.
Who is the assignee on this patent?
Lee Mongsup, Hwang Inseak, Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).