Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
US9281179B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9281179-B2 |
| Application number | US-201113303317-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 23, 2011 |
| Priority date | Dec 23, 2010 |
| Publication date | Mar 8, 2016 |
| Grant date | Mar 8, 2016 |
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Provided is a method of fabricating a semiconductor device. The method includes: preparing a substrate with an etching target, and etching the etching target through a plasma-free etching process that uses an etching gas including one of interhalogen compound, F 2 , XeF 2 and combinations thereof.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a semiconductor device, the method comprising: preparing a substrate with an etching target; and etching the etching target using a plasma-free etching process that uses an etching gas including one of an interhalogen compound, F 2 , XeF 2 , or combinations thereof, and performing a hydrogen replacement process on the substrate after the plasma-free etching process is performed, wherein the hydrogen replacement process includes p…
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