Devices including near field transducer and adhesion layers

Patent metadata

Field	Value
Publication number	US-9281003-B2
Application number	US-201314396486-A
Country	US
Kind code	B2
Filing date	Apr 25, 2013
Priority date	Apr 25, 2012
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A device including a near field transducer (NFT); a write pole; at least one dielectric material positioned between the NFT and the write pole; and an adhesion layer positioned between the NFT and the at least one dielectric material.

First claim

What is claimed is:

1. A device comprising:
a near field transducer (NFT);
a write pole;
at least one dielectric material positioned between the NFT and the write pole; and
an adhesion layer positioned between the NFT and the at least one dielectric material.

2. The device according to claim 1 , wherein the adhesion layer comprises one or more materials selected from:
zirconium (Zr), titanium (Ti), yttrium (Y), scandium (Sc), aluminum (Al), ruthenium (Ru), vanadium (V), silicon (Si), germanium (Ge), tantalum (Ta), tin (Sn), and combinations thereof;
cobalt (Co), nickel (Ni), chromium (Cr), tungsten (W), titanium tungsten (TiW), molybdenum (Mo), magnesium (Mg), niobium (Nb), hafnium (Hf), zinc (Zn), and combinations thereof;
titanium nitride (TiN), zirconium nitride (ZrN), tantalum nitride (TaN), hafnium nitride (HfN) and combinations thereof;
indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), a solid solution of In 2 O 3 —SnO 2 (ITO), zinc oxide (ZnO), aluminum (Al) doped ZnO, gallium (Ga) doped ZnO, and combinations thereof;
sulfides of Zr, Zn, Ti, Co, silver (Ag), copper (Cu), indium (In), cadmium (Cd), Sn, bismuth (Bi), lead (Pb), selenium (Se), iron (Fe), Mo; or binary sulfides thereof; and
silicon carbide (SiC) or hydrogenated silicon carbide (SiC:H).

3. The device according to claim 1 , wherein the adhesion layer comprises Zr, Ti, Y, Sc, Al, Ru, V, Si, Ge, Ta, Sn, or combinations thereof; and the adhesion layer has an average thickness from about 2.5 Å to about 50 Å.

4. The device according to claim 1 , wherein the adhesion layer comprises Co, Ni, Cr, W, TiW, Mo, Mg, Nb, Hf, Zn, or combinations thereof; and the adhesion layer has an average thickness of not greater than about 25 Å.

5. The device according to claim 1 , wherein the adhesion layer comprises TiN, ZrN, TaN, HfN, or combinations thereof and the adhesion layer has an average thickness of not greater than about 50 Å.

6. The device according to claim 1 , wherein the adhesion layer comprises In 2 O 3 , SnO 2 , ITO, ZnO, Al doped ZnO, Ga doped ZnO, or combinations thereof; and the adhesion layer has an average thickness of not greater than about 50 Å.

7. The device according to claim 1 , wherein the adhesion layer comprises sulfides of Zr, Zn, Ti, Co, Ag, Cu, In, Cd, Sn, Bi, Pb, Se, Fe, Mo; or binary sulfides thereof.

8. The device according to claim 1 , wherein the adhesion layer comprises SiC, SiC:H, or combinations thereof.

9. The device according to claim 1 further comprising a second adhesion layer adjacent the opposing surface of the NFT.

10. The device according to claim 9 , wherein the second adhesion layer comprises one or more materials selected from:
Co, Ni, Cr, W, TiW, Mo, Mg, Nb, Hf, Zn, and combinations thereof;
TiN, ZrN, TaN, HfN, and combinations thereof;
In 2 O 3 , SnO 2 , ITO, ZnO, Al doped ZnO, Ga doped ZnO and combinations thereof;
sulfides of Zr, Zn, Ti, Co, Ag, Cu, In, Cd, Sn, Bi, Pb, Se, Fe, Mo; or binary sulfides thereof; and
SiC, SiC:H, and combinations thereof.

11. The device according to claim 1 further comprising additional adhesion layers adjacent a non-opposing surface of the NFT.

12. The device according to claim 11 , wherein the additional adhesion layer comprises one or more materials selected from:
Co, Ni, Cr, W, TiW, Mo, Mg, Nb, Hf, Zn, and combinations thereof;
TiN, ZrN, TaN, HfN, and combinations thereof;
In 2 O 3 , SnO 2 , ITO, ZnO, Al doped ZnO, Ga doped ZnO and combinations thereof;
sulfides of Zr, Zn, Ti, Co, Ag, Cu, In, Cd, Sn, Bi, Pb, Se, Fe, Mo; or binary sulfides thereof; and
SiC, SiC:H, and combinations thereof.

13. The device according to claim 9 further comprising additional adhesion layers adjacent a non-opposing surface of the NFT.

14. The device according to claim 1 , wherein the NFT comprises Au, Au doped with another material, Ag, Ag doped with another material, Cu, or Al.

15. The device according to claim 1 , wherein the NFT is a peg and disc type NFT.

16. The device according to claim 1 further comprising an energy source, wherein the NFT is configured to receive energy from the energy source.

17. The device according to claim 16 , wherein the energy source comprises a laser.

18. The device according to claim 16 further comprising a waveguide, the waveguide configured to receive the energy from the energy source and couple it into the NFT.

19. The device according to claim 10 , wherein the NFT comprises Au, Au doped with another material, Ag, Ag doped with another material, Cu, or Al.

20. The device according to claim 10 , further comprising an energy source, wherein the NFT is configured to receive energy from the energy source.

Assignees

• Seagate Technology Llc

Inventors

• Zhao Tong
• Zhu Meng
• Huang Xiaoyue
• Kautzky Michael C

Classifications

• G11B5/4866

  the arm comprising an optical waveguide, e.g. for thermally-assisted recording · CPC title

• G11B5/6088

  Optical waveguide in or on flying head · CPC title

• G11B5/314 Primary

  where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence) · CPC title

• G11B13/08 Primary

  using near-field interactions or transducing means and at least one other method or means for recording or reproducing · CPC title

• G11B5/3133

  including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure (G11B5/3106 takes precedence) · CPC title