Electro-optical device, shift register circuit, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9280942-B2
Application number	US-201414146451-A
Country	US
Kind code	B2
Filing date	Jan 2, 2014
Priority date	Feb 9, 2009
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

An electro-optical device is configured to be capable of using a region of a gate line drive circuit efficiently and preventing rising speed of a gate line selection signal from decreasing (rising delay), and a shift register circuit is composed of a single conductivity type transistor which is suitable for the device. The gate line drive circuit including an odd driver to drive odd rows of a plurality of gate lines, and an even driver to drive even rows thereof. Each unit shift register in the odd and even drivers receives a selection signal in the second previous row and activates its own selection signal two horizontal periods later. A start pulse of the even driver is delayed in phase by one horizontal period with respect to a start pulse of the odd driver.

First claim

What is claimed is:

1. A semiconductor device comprising:
a MOS capacitor element having two terminals which overlap with one another, wherein
a first terminal of the two terminals of said MOS capacitor element is a gate electrode of an a-Si (amorphous silicon) transistor,
a second terminal of the two terminals of the MOS capacitor element is at least one current electrode of said a-Si transistor,
the gate electrode of said a-Si transistor is defined by a gate length and a gate width,
the gate length of said a-Si transistor is longer than the gate width of said a-Si transistor, and
an active layer of said a-Si transistor is disposed between the two terminals of the MOS capacitor element.

2. The semiconductor device according to claim 1 , wherein
said a-Si transistor comprises two current electrodes,
the second terminal of said MOS capacitor element is one of said two current electrodes of said a-Si transistor, and
the other of said two current electrodes of said a-Si transistor in a floating state or is supplied with a constant voltage.

3. The semiconductor device according to claim 1 , wherein
said a-Si transistor comprises two current electrodes, and
the second terminal of said MOS capacitor element is both of said two current electrodes of said a-Si transistor.

4. A semiconductor device comprising:
a MOS capacitor element having two terminals which overlap with one another, wherein
a first terminal of the two terminals of said MOS capacitor element is a gate electrode of an a-Si (amorphous silicon) transistor,
a second terminal of the two terminals of said MOS capacitor element is only one of two current electrodes of said a-Si transistor,
a first current electrode of the two current electrodes of said a-Si transistor is defined by a first width,
a second current electrode of the two current electrodes of said a-Si transistor is defined by a second width,
the first width is different from the second width,
the second terminal of said MOS capacitor element is only the one of the first current electrode and the second current electrode having a width narrower than a width of the other of the first current electrode and the second current electrode, and
an active layer of said a-Si transistor is disposed between the two terminals of the MOS capacitor element.

5. The semiconductor device according to claim 4 , wherein
the one of the first current electrode and the second current electrode having a width longer than a width of the other of the first current electrode and the second current electrode is in the floating state or is supplied with the constant voltage.

6. The semiconductor device according to claim 1 , wherein the semiconductor device is a shift register.

7. The semiconductor device according to claim 4 , wherein the semiconductor device is a shift register.

Assignees

• Mitsubishi Electric Corp

Inventors

• Tobita Youichi

Classifications

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6746

  Amorphous silicon · CPC title

• H10D30/6731

  Top-gate only TFTs · CPC title

• H10D1/66

  Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors · CPC title

• G11C19/28

  using semiconductor elements (G11C19/14, G11C19/36 take precedence) · CPC title