Field guided exposure and post-exposure bake process

Patent metadata

Field	Value
Publication number	US-9280070-B2
Application number	US-201414476944-A
Country	US
Kind code	B2
Filing date	Sep 4, 2014
Priority date	Jul 10, 2014
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the diffusion of the charged species generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. The field application may additionally or alternatively control the diffusion of the charged species in a direction perpendicular to a plane formed by the photoresist layer. Such controlled perpendicular diffusion may increase the photoresist sensitivity. In other embodiments, the field may control the diffusion of the charged species within the plane of the photoresist layer but in a direction perpendicular or non-parallel to the line and spacing direction. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

First claim

What is claimed is:

1. A method of processing a substrate, the method comprising:
applying a photoresist layer containing a photoacid generator to a substrate;
exposing portions of the photoresist layer to electromagnetic radiation to generate charged species from the photoacid generator and to form substantially parallel lines of material in the photoresist layer having different chemical properties than the portions of the photoresist layer not exposed to the electromagnetic radiation;
after exposing the substrate, heating the substrate within a vacuum processing chamber and reducing the pressure; and
guiding the generated charged species in a direction substantially perpendicular to the substrate supporting surface.

2. The method of claim 1 , wherein the guiding comprises flowing a remotely generated plasma into the vacuum processing chamber.

3. The method of claim 2 , wherein an energy of the ions in the remotely generated plasma is between about 5 eV and about 50 eV.

4. The method of claim 2 , further comprising exposing the photoresist layer to a magnetic field, wherein the magnetic field is oriented to guide the charged species in a direction substantially perpendicular to the substrate supporting surface.

5. The method of claim 1 , wherein the generated charged species are guided by an electric field generated by applying to a voltage to a substantially continuous electrode having a flat surface opposite the photoresist layer, wherein the electrode is spaced apart from the substrate support by a distance of at least one 0.1 mm, wherein the voltage is between about 500V and 100 kV and is applied from a pulsed DC power source, wherein the power has a frequency of between about 10 Hz and 1 MHz.

6. The method of claim 5 , wherein the duty cycle of the pulsed DC power is between about 5% and about 95%, and wherein the rise and fall time of the pulsed DC power is between about 1 ns about 1000 ns.

7. The method of claim 5 , further comprising exposing the photoresist layer to a magnetic field, wherein the magnetic field is oriented in a direction parallel to the electric field.

8. The method of claim 7 , wherein the magnetic field strength at the photoresist layer is between about 0.1 T and about 10 T.

9. The method of claim 4 , further comprising controlling the temperature of the electrode to substantially match the temperature of the substrate.

10. The method of claim 4 , further comprising guiding the generated charged species in a direction substantially parallel to the substrate supporting surface and along the direction of the substantially parallel lines.

11. The method of claim 10 , wherein the guiding the generated charged species in a direction substantially perpendicular to the substrate supporting surface and the guiding the generated charged species in a direction substantially parallel to the substrate supporting surface and along the direction of the substantially parallel lines occur at the same time.

12. The method of claim 10 , wherein the guiding the generated charged species in a direction substantially perpendicular to the substrate supporting surface occurs during the exposing and the guiding the generated charged species in a direction substantially parallel to the substrate supporting surface and along the direction of the substantially parallel lines occurs during the heating.

13. The method of claim 10 , wherein the guiding the generated charged species in a direction substantially perpendicular to the substrate supporting surface occurs during the heating and the guiding the generated charged species in a direction substantially parallel to the substrate supporting surface and along the direction of the substantially parallel lines occurs during the exposing.

Assignees

• Applied Materials Inc

Inventors

• Xie Peng
• Godet Ludovic

Classifications

• G03F7/38 Primary

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/2022

  Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title

• G03F7/70841 Primary

  Constructional issues related to vacuum environment, e.g. load-lock chamber · CPC title

• G03F7/70325 Primary

  Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses · CPC title