Lithographic method and apparatus

Patent metadata

Field	Value
Publication number	US-9280064-B2
Application number	US-201213685467-A
Country	US
Kind code	B2
Filing date	Nov 26, 2012
Priority date	Dec 2, 2011
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

First claim

The invention claimed is:

1. A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method comprising using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

2. The method of claim 1 , wherein the phase modification reduces contrast at the substrate of the radiation diffracted from the assist feature.

3. The method of claim 1 , wherein the phase modification applied by the optical phase adjustment apparatus has a negligible effect upon the functional feature image exposed in the resist on the substrate.

4. The method of claim 1 , wherein the phase modification is applied to radiation of a particular diffraction order, and is not significantly applied to radiation of one or more other diffraction orders.

5. The method of claim 4 , wherein the particular diffraction order is the 3rd diffraction order.

6. The method of claim 1 , wherein the phase modification comprises reducing the optical path length of radiation which passes through a phase advancing area of the optical phase adjustment apparatus and increasing the optical path length of radiation which passes through a phase delaying area of the optical phase adjustment apparatus.

7. The method of claim 6 , wherein the optical path length reduction varies within the phase advancing area, and the optical path length increase varies within the phase delaying area.

8. The method of claim 6 , wherein phase advancing areas and phase delaying areas are provided in pairs.

9. The method of claim 6 , wherein phase advancing areas and phase delaying areas are provided in a point-symmetric distribution or in a point-antisymmetric distribution.

10. A lithographic apparatus comprising an optical phase adjustment apparatus configured to apply a method according to claim 1 .

11. A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method comprising using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, wherein the phase modification has a lesser effect upon radiation which has been diffracted from a functional feature of the pattern.

12. A lithographic apparatus comprising
a support structure to support a patterning device, the patterning device serving to provide a cross-section of a radiation beam with a pattern;
a projection system to project the patterned radiation beam onto a target portion of a substrate;
an optical phase adjustment apparatus located at or adjacent to a pupil plane of the projection system; and
a controller configured to operate the optical phase adjustment apparatus to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.

13. The apparatus of claim 12 , wherein the phase modification is configured to reduce contrast at the substrate of the radiation diffracted from the assist feature.

14. The apparatus of claim 12 , wherein the phase modification applied by the optical phase adjustment apparatus has a lesser effect on radiation which has been diffracted from the functional feature.

15. The apparatus of claim 12 , wherein the controller is configured to operate the optical phase adjustment apparatus to apply the phase modification to radiation of a particular diffraction order, and to not significantly apply the phase modification to radiation of one or more other diffraction orders.

16. The apparatus of claim 15 , wherein the particular diffraction order is the 3rd diffraction order.

17. The apparatus of claim 12 , wherein the phase modification comprises reducing the optical path length of radiation which passes through a phase advancing area of the optical phase adjustment apparatus and increasing the optical path length of radiation which passes through a phase delaying area of the optical phase adjustment apparatus.

18. The apparatus of claim 17 , wherein the optical path length reduction applied by the phase advancing area is substantially equal to the optical path length increase applied by the phase delaying area.

19. The apparatus of claim 17 , wherein the sum of the phase modification applied by all of the modifying areas of the optical phase adjustment apparatus is substantially zero.

20. The apparatus of claim 17 , wherein phase advancing areas and phase delaying areas are provided in a point-symmetric distribution or in a point-antisymmetric distribution.

Assignees

• Engblom Peter David
• Köhler Carsten Andreas
• Staals Frank
• De Winter Laurentius Cornelius
• Asml Netherlands Bv

Inventors

• Engblom Peter David
• Köhler Carsten Andreas
• Staals Frank
• De Winter Laurentius Cornelius

Classifications

• G03F7/70425 Primary

  Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning · CPC title

• G03F7/70433

  Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors · CPC title

• G03F1/144

  Physics · mapped topic

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title