Optical interconnection for stacked integrated circuit

Patent metadata

Field	Value
Publication number	US-9279937-B2
Application number	US-201414248759-A
Country	US
Kind code	B2
Filing date	Apr 9, 2014
Priority date	Jun 21, 2013
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

An optical interconnection for a stacked integrated circuit, is provided. The optical interconnection includes: an optical transmission unit disposed in a first layer and an optical receiving unit disposed in a second layer, different from the first layer, and spaced apart from the optical transmission unit by a predetermined gap. The optical transmission unit includes a first optical antenna that outputs light; the optical receiving unit includes a second optical antenna which receives light transmitted from the optical transmission unit. At least one of the first and second optical antennas includes a plurality of nanostructures configured to transmit or receive an optical signal.

First claim

What is claimed is:

1. An optical interconnection structure comprising:
an optical transmission unit disposed in a first layer, the optical transmission unit comprising a first optical antenna that outputs light; and
an optical receiving unit disposed in a second layer, different from the first layer and spaced apart from the optical transmission unit by a predetermined gap, the optical receiving unit comprising a second optical antenna which receives light transmitted from the optical transmission unit,
wherein the first optical antenna comprises a plurality of first nanostructures, each of the plurality of first nanostructures comprising a parallelepiped-shaped slot, wherein the second optical antenna comprises a plurality of second nanostructures, each of the plurality of second nanostructures comprising a parallelepiped-shaped slot, and wherein the plurality of second nanostructures are spaced apart from and face the plurality of first nanostructures and wherein the plurality of second nanostructures are configured to transmit or receive an optical signal.

2. The optical interconnection structure of claim 1 , wherein the first layer and the second layer comprise one of:
a layer of a first stacked electronic device chip and a layer of a second stacked electronic device chip,
a layer of a first stacked photonic device ship and a layer of a second stacked photonic device chip,
a layer of a first semiconductor package and a layer of a second semiconductor package,
a layer of an electronic device chip and a layer of a photonic device chip being, and
a layer of a semiconductor package, and a layer of one of an electronic device chip and a stacked photonic device chip.

3. The optical interconnection structure of claim 1 , wherein the first layer is a metal layer and the second layer is a metal layer.

4. The optical interconnection structure of claim 1 , wherein at least one of the first layer and the second layer comprises a plasmonic waveguide comprising a metal layer that propagates an optical signal in a form of surface plasmon.

5. The optical interconnection structure of claim 4 , wherein at least cane of the plurality of first nanostructures and the plurality of second nanostructures are formed on the plasmonic waveguide.

6. The optical interconnection structure of claim 4 , wherein the plasmonic waveguide further comprises a dielectric layer in contact with the metal layer.

7. The optical interconnection structure of claim 6 , wherein the metal layer of the plasmonic waveguide is a first metal layer, and the plasmonic waveguide further comprises a second metal layer formed a surface of the dielectric layer opposite a surface of the dielectric layer in contact with the first metal layer, such that the plasmonic waveguide comprises a metal layer-dielectric layer-metal layer structure.

8. The optical interconnection structure of claim 1 , wherein the optical transmission unit further comprises a laser light source, and the optical receiving unit further comprises an optical detector.

9. The optical interconnection structure of claim 1 , wherein:
the plurality of first nanostructures feed light to the plurality of second nanostructures; and
the plurality of second nanostructures direct light incident thereon.

10. The optical interconnection structure of claim 9 , wherein the plurality of second nanostructures form a predetermined angle with respect to the plurality of first nanostructure.

11. The optical interconnection structure of claim 10 , further comprising at least one third nanostructure which reflects light incident thereon.

12. The optical interconnection structure of claim 11 , wherein the third nanostructure is parallel to the plurality of second nanostructures.

13. The optical interconnection structure of claim 9 , further comprising at least one third nanostructure which reflects light incident thereon.

14. The optical interconnection structure of claim 13 , wherein the at least one third nanostructure is parallel to the plurality of second nanostructures.

15. The optical interconnection structure of claim 1 , wherein each of the plurality of first nanostructures and the plurality of second nanostructures has a dimension smaller than a wavelength of transmitted and received light.

16. The optical interconnection structure of claim 1 , wherein the plurality of second nanostructures are upside down with respect to the plurality of first nanostructures.

17. The optical interconnection structure of claim 1 , wherein the optical transmission unit is disposed in a first chip and the optical receiving unit is disposed in a second chip, different from the first chip, such that transmission of an optical signal between the optical transmission unit and the optical receiving unit comprise an optical transmission unit is a chip-to-chip communication.

18. An optical interconnection structure comprising:
an optical transmission unit comprising a first optical antenna comprising a first metal layer comprising a plurality of first nanostructures formed therein, and
an optical reception unit comprising a second optical antenna comprising a second metal layer, different from the first metal layer, comprising a plurality of second nanostructures formed therein,
wherein each of the plurality of first nanostructures comprises a parallelepiped-shaped slot, wherein each of the plurality of second nanostructures comprises a parallelepiped-shaped slot, and wherein the plurality of second nanostructures are spaced apart from and face the plurality of first nanostructures, such that an optical signal transmitted by the first optical antenna is received by the second optical antenna.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Roh Young-Geun
• Lee Chang-Won
• Kim Un-Jeong
• Kim Jin-Eun
• Park Yeon-Sang
• Lee Jae-Soong
• Cheon Sang-Mo

Classifications

• G02B6/1226 Primary

  involving surface plasmon interaction · CPC title

• G02B6/10

  of the optical waveguide type (G02B6/02, G02B6/24 take precedence; devices or arrangements for the control of light by electric, magnetic, electro-magnetic or acoustic means G02F1/00; transferring the modulation of modulated light G02F2/00; optical logic elements G02F3/00; optical analogue/digital converters G02F7/00) · CPC title

• G02B6/00 Primary

  Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title