MEMS device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9278850-B2
Application number	US-201514642031-A
Country	US
Kind code	B2
Filing date	Mar 9, 2015
Priority date	Mar 18, 2014
Publication date	Mar 8, 2016
Grant date	Mar 8, 2016

Abstract

A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.

First claim

What is claimed is:

1. A MEMS device, comprising:
a semiconductor substrate whose main surface has a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed;
a functional element that is disposed within a volume formed by the trench of the semiconductor substrate and includes a connection electrode;
a structural member that is provided in the trench of the semiconductor substrate and forms a cavity surrounding the functional element;
a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity, the conductive member being insulated from another part of the lid portion;
an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and the semiconductor circuit element;
a first electrode that penetrates the insulating layer and is electrically connected to the conductive member;
a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and
wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.

2. The MEMS device according to claim 1 , wherein
the surface of the insulating layer is treated by CMP (Chemical Mechanical Polishing).

3. The MEMS device according to claim 1 , wherein
in the trench of the semiconductor substrate, the functional element and the structural member are provided in a region that is lower than the main surface of the semiconductor substrate.

4. A method of manufacturing a MEMS device, the method comprising:
(a) forming a trench in a first region of a main surface of a semiconductor substrate;
(b) forming a functional element and a structural member within a volume formed by the trench of the semiconductor substrate, the functional element including a connection electrode, and the structural member forming a cavity surrounding the functional element;
(c) forming a sacrificial film in the cavity;
(d) forming a first lid portion in which an opening is formed and which covers a part of the cavity;
(e) forming a semiconductor circuit element in a second region of the main surface of the semiconductor substrate;
(f) removing the sacrificial film in the cavity through release etching;
(g) forming, on a surface of the first lid portion, a second lid portion that includes a conductive member electrically connected to the connection electrode, the conductive member being insulated from another part of the second lid portion;
(h) forming an insulating layer that covers the main surface of the semiconductor substrate on which the first lid portion, the second lid portion and the semiconductor circuit element are formed;
(i) forming a first electrode and a second electrode, the first electrode penetrating the insulating layer and being electrically connected to the conductive member, and the second electrode penetrating the insulating layer and being electrically connected to the semiconductor circuit element; and
(j) forming, on a surface of the insulating layer, wiring that brings the first electrode and the second electrode into electrical connection to each other.

Assignees

• Seiko Epson Corp

Inventors

• Yoshizawa Takahiko

Classifications

• H10W90/28

  the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape · CPC title

• H10W90/22

  the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL · CPC title

• H10W70/682

  comprising holes having chips therein · CPC title

• B81C1/00301 Primary

  Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias · CPC title

• B81B7/007 Primary

  Interconnections between the MEMS and external electrical signals · CPC title