Nonvolatile memory device and storage device including nonvolatile memory device
US-10163511-B2 · Dec 25, 2018 · US
US9276578B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9276578-B2 |
| Application number | US-201314010195-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2013 |
| Priority date | Aug 31, 2012 |
| Publication date | Mar 1, 2016 |
| Grant date | Mar 1, 2016 |
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A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.
Opening claim text (preview).
The invention claimed is: 1. A dynamic logic gate, comprising: one or more four-terminal, nano-electro-mechanical-switches (NEMS); each NEMS having a body electrode, a source electrode, a gate electrode, and a drain electrode, the source electrode being selectively electrically connected to the drain electrode, as a function of tension between the gate electrode and the body electrode; wherein the body electrode of each NEMS is biased to a negative bias voltage (V b ) having an absolute value of min{V po }, where V po is a set of varying pull-off voltages of all NEMS in the dynamic logic gate due to process variations, wherein a given pull-off voltage V po comprises an absolute value of an applied gate-to-body voltage |V gb | that results in the source electrode from being electrically disconnected from the drain electrode, and such that an applied ground voltage (0V) to the gate electrode results in pull-off of any of the NEMS; and wherein a power supply voltage (V dd ) is set to a value corresponding to the expression: max{V pi }−min{V po }, where V pi is a set of varying pull-in voltages of all NEMS in the dynamic logic gate due to process variations, and wherein a given pull-in voltage V pi comprises an absolute value of an applied gate-to-body voltage |V gb | that results in the source electrode from being electrically connected to the drain electrode. 2. The dynamic logic gate of claim 1 , further comprising a time-varying power for supplying a timing-varying power clock signal to the nano-electro-mechanical-switch. 3. The dynamic logic gate of claim 2 , wherein the time-varying power clock signal is one of a sinusoidal signal and a trapezoidal signal. 4. A dynamic logic cascade circuit comprising single-rail dynamic logic gates, comprising at least one dynamic logic gate according to claim 1 , wherein the dynamic logic cascade circuit generates a single logic output. 5. The dynamic logic cascade circuit according to claim 4 , comprising four dynamic logic gates coupled to four respective power sources for providing the four dynamic logic gates with respective time-varying power clock signals. 6. The dynamic logic cascade circuit according to claim 5 , wherein the four power clock signals are out-of-phase by 90 degrees. 7. The dynamic logic cascade circuit according to claim 5 , wherein each of the four time-varying power clock signals comprises four equal timing intervals, respectively corresponding to pre-charge, hold, evaluate and latch periods. 8. A dynamic logic cascade circuit comprising dual-rail dynamic logic gates, comprising at least one dynamic logic gate according to claim 1 , wherein the dynamic logic cascade circuit generates a logic output and its complementary output. 9. A dynamic logic cascade circuit according to claim 8 , comprising two cross-coupled dynamic logic gates for latching output signals. 10. A dynamic logic cascade circuit according to claim 8 , further comprising a dynamic logic gate for initializing output signals. 11. A dynamic logic cascade circuit according to claim 8 , comprising four dual-rails of dynamic logic gates and four respective power sources for providing the four dual-rails of dynamic logic gates with respective time-varying power clock signals.
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