Light emitting device, light emitting device package

Patent metadata

Field	Value
Publication number	US-9276175-B2
Application number	US-97967310-A
Country	US
Kind code	B2
Filing date	Dec 28, 2010
Priority date	Dec 29, 2009
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.

First claim

What is claimed is:

1. A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer,
a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a support layer on the light emitting structure;
a filter layer on the support layer; and
an air gap inter-disposed between the light emitting structure and the filter layer,
wherein the filter layer comprises:
a first dielectric layer having a first refractive index; and
a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index different from the first refractive index,

wherein an outer side surface of the support layer is vertically aligned with an outer side surface of the filter layer;
wherein a lateral width of the air gap is greater than a lateral width of the support layer, and
wherein all top surfaces of the support layer directly contact a bottom surface of the filter layer.

2. The light emitting device according to claim 1 , wherein the support layer comprises one of copper (Cu) and gold (Au).

3. The light emitting device according to claim 1 , wherein a thickness of the first dielectric layer and a thickness of the second dielectric layer are both λ/(4n×cosθ), where λ is a wavelength of long-wavelength light to be reflected, n is a refractive index of the first or the second dielectric layer, respectively, and θ is an angle of incident light.

4. The light emitting device according to claim 1 , further comprising a phosphor layer on the filter layer.

5. The light emitting device according to claim 1 , further comprising:
at least one electrode on the light emitting structure; and
a conductive or non-conductive substrate under the light emitting structure.

6. The light emitting device according to claim 1 , wherein the air gap is flush with the support layer.

7. The light emitting device according to claim 1 , wherein the support layer is only between a periphery of the filter layer and a periphery of the light emitting structure.

8. The light emitting device according to claim 1 , wherein a maximum lateral width of the air gap is greater than a maximum lateral width of the support layer.

9. A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a support layer on the light emitting structure;
a filter layer on the support layer, and
an air gap inter-disposed between the light emitting structure and the filter layer,
wherein a topmost surface of the support layer is flush with a bottom most surface of the filter layer,
wherein a lateral width of the air gap is greater than a lateral width of the support layer, and
wherein all top surfaces of the support layer directly contact a bottom surface of the filter layer.

10. The light emitting device according to claim 9 , further comprising a phosphor layer on the filter layer.

11. The light emitting device according to claim 10 , wherein the phosphor layer comprises a substantially flat top surface.

12. The light emitting device according to claim 9 , further comprising:
at least one electrode on the light emitting structure; and
a conductive or non-conductive substrate under the light emitting structure.

13. The light emitting device according to claim 9 , wherein the air gap is flush with the support layer.

14. The light emitting device according to claim 9 , wherein the support layer is only between a periphery of the filter layer and a periphery of the light emitting structure.

15. The light emitting device according to claim 9 , wherein a maximum lateral width of the air gap is greater than a maximum lateral width of the support layer.

16. A light emitting device package comprising:
a package body;
at least one electrode layer on the package body; and
a light emitting device electrically connected to the electrode layer,
wherein the light emitting device comprises:
a light emitting structure including a first conductive type semiconductor layer,
a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a support layer on the light emitting structure; a filter layer on the support layer; and
an air gap inter-disposed between the light emitting structure and the filter layer,
wherein the filter layer comprises:
a first dielectric layer having a first refractive index; and
a second dielectric layer on the first dielectric layer, the second dielectric layer having a second refractive index different from the first refractive index,

wherein an outer side surface of the support layer is vertically aligned with an outer side surface of the filter layer;
wherein a lateral width of the air gap is greater than a lateral width of the support layer, and
wherein all to surfaces of the support layer directly contact a bottom surface of the filter.

Assignees

• Park Hyung Jo
• Kim Sun Kyung
• Choi Woon Kyung
• Lg Innotek Co Ltd

Inventors

• Park Hyung Jo
• Kim Sun Kyung
• Choi Woon Kyung

Classifications

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/81 Primary

  Bodies · CPC title

• H01L33/44 Primary

  Electricity · mapped topic

• H01L2224/48091

  Electricity · mapped topic

• H01L2924/12032

  Electricity · mapped topic