Light emitting device, light emitting device package, and lighting system including the same

Patent metadata

Field	Value
Publication number	US-9276169-B2
Application number	US-90841310-A
Country	US
Kind code	B2
Filing date	Oct 20, 2010
Priority date	Oct 21, 2009
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Provided are a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a second electrode layerelectrode, a light emitting structure, a texture, and a current spreading layer. The light emitting structure is on second electrode layerelectrode, and includes a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer. The texture is on at least one portion of the light emitting structure. The current spreading layer is on the light emitting structure provided with the texture.

First claim

What is claimed is:

1. A light emitting device comprising:
a second electrode layer;
a light emitting structure on the second electrode layer, the light emitting structure comprising a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, and a first conductive type semiconductor layer on the active layer;
a texture on at least one portion of the light emitting structure;
a current spreading layer formed directly on the light emitting structure provided with the texture;
a first electrode layer on the current spreading layer; and
a coating member on the upper side of the current spreading layer, wherein the texture is formed in an upper surface of the first conductive type semiconductor layer,
wherein a vertical cross section of the texture comprises a first direction and a second direction being different from the first direction,
wherein the first direction and the second direction are substantially perpendicular,
wherein the texture comprises a plurality of protruding portions and a plurality of groove portions,
wherein the plurality of protruding portions are connected to each other, wherein the coating member is disposed to surround the first electrode layer, and wherein the coating member comprises phosphor, and
wherein a top surface of the first electrode layer is lower than a top surface of the coating member;
wherein the current spreading layer comprises a plurality of protruding portions and a plurality of groove portions.

2. The light emitting device of claim 1 , wherein the texture is disposed on at least one portion of the first conductive type semiconductor layer of the light emitting structure.

3. The light emitting device of claim 2 , comprising a current blocking layer at one portion of the first conductive type semiconductor layer provided with the texture.

4. The light emitting device of claim 3 , wherein the first electrode layer on the current spreading layer is in a region vertically and partially corresponding to the current blocking layer.

5. The light emitting device of claim 4 , wherein the current blocking layer comprises at least one of a dielectric layer, a second conductive type ion implantation layer, a second conductive type spreading layer, a non-conductive type layer, and an amorphous layer.

6. The light emitting device of claim 1 , wherein the light emitting structure has a thickness of 5×(λ/n) or less, where λ is a wavelength of the active layer, and n is a refractive index of the light emitting structure.

7. The light emitting device of claim 1 , comprising an etch stop layer in the first conductive type semiconductor layer.

8. The light emitting device of claim 1 , wherein the active layer is not exposed by the texture.

9. The light emitting device of claim 1 , wherein the current spreading layer is disposed on an entire region of the light emitting structure provided with the texture.

10. The light emitting device of claim 1 , wherein the current spreading layer is disposed on the first conductive type semiconductor layer except for a region provided with the texture.

11. A light emitting device package comprising:
a package body;
the light emitting device of claim 1 on the package body; and
an electrode in the package body, the electrode being electrically connected to the light emitting device.

12. A lighting system comprising a light emitting module comprising the light emitting device package of claim 11 .

13. The light emitting device of claim 1 , wherein the first electrode layer is disposed directly on the current spreading layer.

14. The light emitting device of claim 1 , wherein the current spreading layer is disposed on the first conductive type semiconductor layer except for a region provided with the texture, and the first electrode layer is disposed on the first conductive type semiconductor layer except for the region provided with the texture.

15. The light emitting device of claim 1 , wherein the texture comprises a rectangular shape vertical cross section.

16. The light emitting device of claim 1 , wherein the first electrode layer is formed on only a protruding portion of the texture.

17. The light emitting device of claim 1 , wherein the coating member contacts the top surface of the first electrode layer.

18. The light emitting device of claim 1 , wherein the coating member contacts a side surface of the first electrode layer.

Assignees

• Kim Sun Kyung
• Lg Innotek Co Ltd

Inventors

• Kim Sun Kyung

Classifications

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/872

  Periodic patterns for optical field-shaping, e.g. photonic bandgap structures · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title