Infrared sensor device and method for producing an infrared sensor device

Patent metadata

Field	Value
Publication number	US-9276146-B2
Application number	US-201314400691-A
Country	US
Kind code	B2
Filing date	Apr 12, 2013
Priority date	May 16, 2012
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.

First claim

The invention claimed is:

1. An infrared sensor device, comprising:
at least one sensor element formed in a semiconductor substrate, the at least one sensor element substantially U-shaped and including:
two vertically extending portions separated by a vertically extending portion of oxide material; and
a horizontally extending portion at a lower end of the at least one sensor element that connects the two vertically extending portions;

a gap outwardly of the at least one sensor element and encircling the at least one sensor element;
a cavity beneath the sensor element and in fluid communication with the gap such that the gap and the cavity thermally insulate the at least one sensor element; and
a suspension unit configured to suspend the at least one sensor element above the cavity, the at least one sensor element arranged substantially below the suspension unit.

2. The infrared sensor device as claimed in claim 1 , wherein the sensor element is configured as a diode.

3. The infrared sensor device as claimed in claim 2 , wherein:
the at least one sensor element is monocrystalline, and
a vertical extent of the two vertically extending portions is greater than a horizontal extent of the horizontally extending portion such that the at least one sensor element is arranged substantially vertically.

4. The infrared sensor device as claimed in claim 3 , wherein the at least one sensor element is surrounded by oxide material.

5. The infrared sensor device as claimed in claim 1 , wherein the suspension unit is configured to connect the at least one sensor element to the rest of the wafer in two regions.

6. The infrared sensor device as claimed in claim 1 , wherein the suspension unit is formed symmetrically in the vertical direction, wherein an electrical conductor track is arranged in the suspension unit substantially centrally between two layers of oxide material having substantially identical thicknesses, and wherein the electrical conductor track is narrower than the suspension unit.

7. The infrared sensor device as claimed in claim 6 , wherein the conductor track starts substantially in the center of the at least one sensor element and is formed substantially spirally above the at least one sensor element.

8. The infrared sensor device as claimed in claim 6 , wherein a material of the electrical conductor track is at least one from the group: Ti, TiN, Ta, TaN or a combination of Ti, TiN, Ta, and TaN.

9. The infrared sensor device as claimed in claim 1 , wherein an optical thickness of layers of oxide material that are arranged on the at least one sensor element substantially corresponds to an odd multiple of one quarter of a wavelength to be detected.

10. The infrared sensor device as claimed in claim 9 , wherein a thickness of the layers of the oxide material above the at least one sensor element is greater than a thickness of the layers of the oxide material in the region of the suspension unit.

11. The infrared sensor device as claimed in claim 1 , wherein a reflector layer is arranged on a surface of the at least one sensor element.

12. An infrared sensor array, comprising:
a plurality of sensor elements formed in a semiconductor substrate, each sensor element substantially U-shaped and including:
two vertically extending portions separated by a vertically extending portion of oxide material; and
a horizontally extending portion at a lower end of the at least one sensor element that connects the two vertically extending portions;

a gap outwardly of the plurality of sensor elements and encircling the plurality of sensor elements;
a cavity beneath the plurality of sensor elements and in fluid communication with the gap such that the gap and the cavity thermally insulate the plurality of sensor elements; and
a suspension unit configured to suspend the plurality of sensor elements in the above the cavity, the plurality of sensor elements arranged substantially below the suspension unit.

13. The infrared sensor array as claimed in claim 12 , wherein at least row or column lines of the sensor array comprise polycrystalline silicon.

14. The infrared sensor device as claimed in claim 1 , wherein the semiconductor substrate is configured as an SOI wafer.

15. The infrared sensor array of claim 12 , further comprising:
oxide material surrounding each sensor element such that each sensor element is laterally separated from each other and is also separated from the gap and the cavity.

16. The infrared sensor device as claimed in claim 1 , wherein:
one of the two vertically extending portions of the sensor element has a p-doped region above an n-doped region that is connected to the horizontally extending portion; and
an other of the two vertically extending portions and the horizontally extending portion are n-doped.

Assignees

• Bosch Gmbh Robert

Inventors

• Herrmann Ingo
• Schelling Christoph

Classifications

• H10F77/933

  for devices having potential barriers · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title