Compositions and processes for photolithography

Patent metadata

Field	Value
Publication number	US-9274427-B2
Application number	US-201414301177-A
Country	US
Kind code	B2
Filing date	Jun 10, 2014
Priority date	Dec 31, 2008
Publication date	Mar 1, 2016
Grant date	Mar 1, 2016

Abstract

Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

First claim

What is claimed is:

1. A composition suitable for use in forming a topcoat layer over a layer of photoresist, the composition comprising:
a first resin, a second resin and a third resin which are different from each other,
wherein the first resin comprises one or more fluorinated groups and is present in the composition in a larger proportion by weight than the second and third resins individually,
wherein the second resin has a lower surface energy than a surface energy of the first resin and the third resin,
wherein the second resin is substantially immiscible with the first resin, and
wherein the third resin comprises one or more strong acid groups.

2. The composition of claim 1 , wherein the first resin further comprises a sulfonamide.

3. The composition of claim 1 , wherein the second resin comprises one or more photoacid-labile groups.

4. The composition of claim 1 , wherein the one or more strong acid groups of the third resin comprise a sulfonic acid group.

5. The composition of claim 1 , further comprising a solvent system comprising a mixture of: an alcohol; an alkyl ether and/or an alkane; and a dialkyl glycol mono-alkyl ether.

6. A method of processing a photoresist composition, comprising:
(a) applying a photoresist composition over a substrate to form a photoresist layer;
(b) applying over the photoresist layer a topcoat composition, the composition comprising:
a first resin, a second resin and a third resin which are different from each other,
wherein the first resin comprises one or more fluorinated groups and is present in the composition in a larger proportion by weight than the second and third resins individually,
wherein the second resin has a lower surface energy than a surface energy of the first resin and the third resin,
wherein the second resin is substantially immiscible with the first resin, and
wherein the third resin comprises one or more strong acid groups; and

(c) exposing the photoresist layer to actinic radiation.

7. The method of claim 6 , wherein the exposure is an immersion exposure and the substrate is a semiconductor wafer.

8. The method of claim 6 , wherein the first resin further comprises a sulfonamide.

9. The method of claim 6 , wherein the second resin comprises one or more photoacid-labile groups.

10. The method of claim 6 , wherein the one or more strong acid groups of the third resin comprise a sulfonic acid group.

11. The method of claim 6 , further comprising a solvent system comprising a mixture of: an alcohol; an alkyl ether and/or an alkane; and a dialkyl glycol mono-alkyl ether.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Wang Deyan
• Wu Chunyi

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• C08L33/16

  Homopolymers or copolymers of esters containing halogen atoms · CPC title